Home
Class 12
PHYSICS
Carbon , silicon and germanium have four...

Carbon , silicon and germanium have four valence elcectrons each . These are characterised by valence and conduction bands separated by energy band - gap respectively equal to ` (E_g)_(c) (E_g)_(si) ` and ` (E_g)_(Ge) `. Which of the following statements ture ?

A

`(E_(g))_(Si) lt (E_(g))_(Ge) lt (E_(g))_(C)`

B

`(E_(g))_(C) lt (E_(g))_(Ge)) gt (E_(g))_(Si)`

C

`(E_(g))_(C) gt (E_(g))_(Si) gt (E_(g))_(Ge)`

D

`(E_(g))_(C) = (E_(g))_(Si) = (E_(g))_(Ge)`

Text Solution

Verified by Experts

The correct Answer is:
C
Promotional Banner

Topper's Solved these Questions

  • SEMI CONDUCTOR DEVICES

    NARAYNA|Exercise Level-I (C.W)|21 Videos

  • SEMI CONDUCTOR DEVICES

    NARAYNA|Exercise Level-II (C.W)|33 Videos

  • SEMI CONDUCTOR DEVICES

    NARAYNA|Exercise Level-II (H.W)|36 Videos

  • RAY OPTICS AND OPTICAL INSTRAUMENTS

    NARAYNA|Exercise EXERCISE- 4 One or more than one correct answer type|13 Videos

  • SEMICONDUCTOR ELECTRONICS

    NARAYNA|Exercise ADDITIONAL EXERCISE (ASSERTION AND REASON TYPE QUESTIONS :)|19 Videos

Similar Questions

Explore conceptually related problems

Carbon silicon and germanium have four valence electrons each these are characterised by valence and conduction bands separated by energy band gap respectively equal to which of the following statement is true (a) (E_(g))_(Si)lt(E_(g))_(Ge)lt(E_(g))_(c ) (b) (E_(g))_(c )lt(E_(g))_(Gelt(E_(g))_(Si) (c ) (E_(g))_(c )gt(E_(g))_(Si)gt(E_(g))_(Ge) (d)(E_(g))_(c )=(E_(g))_(si)=(E_(g))_(Ge)

Carbon, silicon and germanium atoms have four valence electrons each. Their valence and conduction bands are separated by energy band gaps represented by (E_(g))_(C),(E_(g))_(Si) and (E_(g))_(Ge) , respectively. Which one of the following relationship is true in their case?

Carbo , silicon and Germanitum atomshave four valence electrons each . Their velence and conduction bands are separeated by energy nands gaps represented by (E_g)_C , (E_g)_(Si), (E_g)_(Ge) repectively . Which relativon is correct ?

Carbon, silicon and germanium have four valence electrons each. The most appropriate statement for these elements (at room temperature) is

NARAYNA-SEMI CONDUCTOR DEVICES-C.U.Q
  1. The mobility of free electrons is greater then that of free holes beca...

    Text Solution

    |

  2. A semiconductor at 0 K behaves as

    Text Solution

    |

  3. Carbon , silicon and germanium have four valence elcectrons each . The...

    Text Solution

    |

  4. The valency of impurity element for making p-type semiconductors is

    Text Solution

    |

  5. In n-type semiconductors the electron concentration is equal to

    Text Solution

    |

  6. Which of the following statements is not true ?

    Text Solution

    |

  7. p-type semiconductor is

    Text Solution

    |

  8. n-type semiconductor is

    Text Solution

    |

  9. An electric field is applied across a semiconductor. Let n be the numb...

    Text Solution

    |

  10. In a n-type semiconductor, the femi energy level lies

    Text Solution

    |

  11. An n-type and p-type silicon can be obtained by doping pure silicon wi...

    Text Solution

    |

  12. The width of forbidden gap in silicon crystal is 1.2 ev. When the crys...

    Text Solution

    |

  13. In extrinsic semiconductors

    Text Solution

    |

  14. The element that can be used as acceptor impurity to dope silicon is

    Text Solution

    |

  15. Among the following, the wrong statement on the case of semiconductor ...

    Text Solution

    |

  16. The value indicated by fermi energy level in an intrinsic semiconducto...

    Text Solution

    |

  17. The conduction band and valency band of a good conductors are

    Text Solution

    |

  18. Two pieces one of germinium and the other of aluminium are cooled from...

    Text Solution

    |

  19. In intrinsic semiconductor at room temperature the no. of electrons an...

    Text Solution

    |

  20. Band gap in insulator is of the order

    Text Solution

    |