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In a n-type semiconductor, the femi ener...

In a n-type semiconductor, the femi energy level lies

A

in the forbidden energy gap nearer to the conduction band.

B

in the forbidden energy gap nearer to the valence band.

C

in the middle of forbidden energy gap

D

outside the forbidden energy gap

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A
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NARAYNA-SEMI CONDUCTOR DEVICES-C.U.Q
  1. n-type semiconductor is

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  2. An electric field is applied across a semiconductor. Let n be the numb...

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  3. In a n-type semiconductor, the femi energy level lies

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  4. An n-type and p-type silicon can be obtained by doping pure silicon wi...

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  5. The width of forbidden gap in silicon crystal is 1.2 ev. When the crys...

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  6. In extrinsic semiconductors

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  7. The element that can be used as acceptor impurity to dope silicon is

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  8. Among the following, the wrong statement on the case of semiconductor ...

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  9. The value indicated by fermi energy level in an intrinsic semiconducto...

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  10. The conduction band and valency band of a good conductors are

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  11. Two pieces one of germinium and the other of aluminium are cooled from...

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  12. In intrinsic semiconductor at room temperature the no. of electrons an...

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  13. Band gap in insulator is of the order

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  14. In p-type semiconductor conduction in due to

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  15. In an intrinsic semiconductor, the fermi energy level is

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  16. With increase in temperature in an intrinsic semiconductor the ration ...

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  17. To obtain n-type extrinsic semiconductor, the impurity element to be a...

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  18. The majority carries in a p-type semiconductor are….

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  19. The objective of adding impurities in the extrinsic semiconductor is

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  20. In intrinsic semiconductor conductivity is

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