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The width of forbidden gap in silicon cr...

The width of forbidden gap in silicon crystal is `1.2 ev`. When the crystal is converted into a n-type semiconductor the distance of fermi level from conduction band is Greater than `0.55 eV`

A

Greater than `0.55 eV`

B

Equal to `0.55 eV`

C

lesser than `0.55 eV`

D

Equal to `1.1 eV`

Text Solution

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The correct Answer is:
C
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NARAYNA-SEMI CONDUCTOR DEVICES-C.U.Q
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  2. An n-type and p-type silicon can be obtained by doping pure silicon wi...

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  3. The width of forbidden gap in silicon crystal is 1.2 ev. When the crys...

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  4. In extrinsic semiconductors

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  5. The element that can be used as acceptor impurity to dope silicon is

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  6. Among the following, the wrong statement on the case of semiconductor ...

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  7. The value indicated by fermi energy level in an intrinsic semiconducto...

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  8. The conduction band and valency band of a good conductors are

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  9. Two pieces one of germinium and the other of aluminium are cooled from...

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  10. In intrinsic semiconductor at room temperature the no. of electrons an...

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  11. Band gap in insulator is of the order

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  12. In p-type semiconductor conduction in due to

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  13. In an intrinsic semiconductor, the fermi energy level is

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  14. With increase in temperature in an intrinsic semiconductor the ration ...

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  15. To obtain n-type extrinsic semiconductor, the impurity element to be a...

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  16. The majority carries in a p-type semiconductor are….

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  17. The objective of adding impurities in the extrinsic semiconductor is

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  18. In intrinsic semiconductor conductivity is

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  19. In intrinsic semiconductor conductivity is due to.

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  20. When the conductivity of a semiconductor is only due to breaking of co...

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