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In extrinsic semiconductors...

In extrinsic semiconductors

A

the conduction band and valence band overlap

B

thegap between conduction band and valence band is near about `16 eV`

C

the gap between conduction band and valence band is near about `1 eV`

D

The gap between conduction band and valence band will be `100 eV` and more

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The correct Answer is:
C
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NARAYNA-SEMI CONDUCTOR DEVICES-C.U.Q
  1. An n-type and p-type silicon can be obtained by doping pure silicon wi...

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  2. The width of forbidden gap in silicon crystal is 1.2 ev. When the crys...

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  3. In extrinsic semiconductors

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  4. The element that can be used as acceptor impurity to dope silicon is

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  5. Among the following, the wrong statement on the case of semiconductor ...

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  6. The value indicated by fermi energy level in an intrinsic semiconducto...

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  7. The conduction band and valency band of a good conductors are

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  8. Two pieces one of germinium and the other of aluminium are cooled from...

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  9. In intrinsic semiconductor at room temperature the no. of electrons an...

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  10. Band gap in insulator is of the order

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  11. In p-type semiconductor conduction in due to

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  12. In an intrinsic semiconductor, the fermi energy level is

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  13. With increase in temperature in an intrinsic semiconductor the ration ...

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  14. To obtain n-type extrinsic semiconductor, the impurity element to be a...

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  15. The majority carries in a p-type semiconductor are….

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  16. The objective of adding impurities in the extrinsic semiconductor is

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  17. In intrinsic semiconductor conductivity is

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  18. In intrinsic semiconductor conductivity is due to.

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  19. When the conductivity of a semiconductor is only due to breaking of co...

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  20. Assertion (A) : C,Si and Ge have 4 Valancy each both but C is an insul...

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