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Among the following, the wrong statement...

Among the following, the wrong statement on the case of semiconductor is

A

Resistivity is in between that of a conductor and insulator

B

Temperature coefficient of resistance is negative

C

Doping increases conductivity

D

At absolute zero temperature it behaves like a conductor.

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The correct Answer is:
D
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NARAYNA-SEMI CONDUCTOR DEVICES-C.U.Q
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  2. The element that can be used as acceptor impurity to dope silicon is

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  3. Among the following, the wrong statement on the case of semiconductor ...

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  4. The value indicated by fermi energy level in an intrinsic semiconducto...

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  5. The conduction band and valency band of a good conductors are

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  6. Two pieces one of germinium and the other of aluminium are cooled from...

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  7. In intrinsic semiconductor at room temperature the no. of electrons an...

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  8. Band gap in insulator is of the order

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  9. In p-type semiconductor conduction in due to

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  10. In an intrinsic semiconductor, the fermi energy level is

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  11. With increase in temperature in an intrinsic semiconductor the ration ...

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  12. To obtain n-type extrinsic semiconductor, the impurity element to be a...

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  13. The majority carries in a p-type semiconductor are….

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  14. The objective of adding impurities in the extrinsic semiconductor is

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  15. In intrinsic semiconductor conductivity is

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  16. In intrinsic semiconductor conductivity is due to.

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  17. When the conductivity of a semiconductor is only due to breaking of co...

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  18. Assertion (A) : C,Si and Ge have 4 Valancy each both but C is an insul...

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  19. The potential barrier at PN junction is due to

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  20. A PN junction diode cannot be used

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