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In an intrinsic semiconductor, the fermi...

In an intrinsic semiconductor, the fermi energy level is

A

nearear to valence band than conduction band

B

equidistant from conduction band and valence band

C

nearer to conduction band than valence band

D

bisecting the conduction band

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The correct Answer is:
B
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NARAYNA-SEMI CONDUCTOR DEVICES-C.U.Q
  1. Band gap in insulator is of the order

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  2. In p-type semiconductor conduction in due to

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  3. In an intrinsic semiconductor, the fermi energy level is

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  4. With increase in temperature in an intrinsic semiconductor the ration ...

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  5. To obtain n-type extrinsic semiconductor, the impurity element to be a...

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  6. The majority carries in a p-type semiconductor are….

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  7. The objective of adding impurities in the extrinsic semiconductor is

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  8. In intrinsic semiconductor conductivity is

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  9. In intrinsic semiconductor conductivity is due to.

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  10. When the conductivity of a semiconductor is only due to breaking of co...

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  11. Assertion (A) : C,Si and Ge have 4 Valancy each both but C is an insul...

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  12. The potential barrier at PN junction is due to

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  13. A PN junction diode cannot be used

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  14. A full wave rectifier with the output is shown in fig. the contributio...

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  15. A full-wave rectifier is used to convert 'n' HZ a.c into d.c, then the...

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  16. If the input frequency of half-wave rectifier is n Hz ac, then its out...

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  17. p-n junction diode acts as

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  18. The process of converting alternating current into direct current is k...

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  19. On increasing reverse voltage in a p-n junction diode the value of rev...

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  20. In forward bias the depletion layer behaves like

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