Home
Class 12
PHYSICS
To obtain n-type extrinsic semiconductor...

To obtain n-type extrinsic semiconductor, the impurity element to be added to germanium should be of valency

A

`2`

B

`5`

C

`4`

D

`3`

Text Solution

Verified by Experts

The correct Answer is:
B
Promotional Banner

Topper's Solved these Questions

  • SEMI CONDUCTOR DEVICES

    NARAYNA|Exercise Level-I (C.W)|21 Videos
  • SEMI CONDUCTOR DEVICES

    NARAYNA|Exercise Level-II (C.W)|33 Videos
  • SEMI CONDUCTOR DEVICES

    NARAYNA|Exercise Level-II (H.W)|36 Videos
  • RAY OPTICS AND OPTICAL INSTRAUMENTS

    NARAYNA|Exercise EXERCISE- 4 One or more than one correct answer type|13 Videos
  • SEMICONDUCTOR ELECTRONICS

    NARAYNA|Exercise ADDITIONAL EXERCISE (ASSERTION AND REASON TYPE QUESTIONS :)|19 Videos

Similar Questions

Explore conceptually related problems

To obtain n-type semiconductor , the impurity introduced is

To obtain a P -type germanium semiconductor, it must be dopped with

To get n -type doped semiconductor, impurity to be added to silicon should have the following number of valence electrons

P -type semiconductors are made by adding impurity element

n-type semiconductor is obtained when

Which type of extrinsic semiconductors has more mobility and why?

To get p-type semiconductor , impurity to be added to silicon should have wihich of the following number of valence electrons?

NARAYNA-SEMI CONDUCTOR DEVICES-C.U.Q
  1. In an intrinsic semiconductor, the fermi energy level is

    Text Solution

    |

  2. With increase in temperature in an intrinsic semiconductor the ration ...

    Text Solution

    |

  3. To obtain n-type extrinsic semiconductor, the impurity element to be a...

    Text Solution

    |

  4. The majority carries in a p-type semiconductor are….

    Text Solution

    |

  5. The objective of adding impurities in the extrinsic semiconductor is

    Text Solution

    |

  6. In intrinsic semiconductor conductivity is

    Text Solution

    |

  7. In intrinsic semiconductor conductivity is due to.

    Text Solution

    |

  8. When the conductivity of a semiconductor is only due to breaking of co...

    Text Solution

    |

  9. Assertion (A) : C,Si and Ge have 4 Valancy each both but C is an insul...

    Text Solution

    |

  10. The potential barrier at PN junction is due to

    Text Solution

    |

  11. A PN junction diode cannot be used

    Text Solution

    |

  12. A full wave rectifier with the output is shown in fig. the contributio...

    Text Solution

    |

  13. A full-wave rectifier is used to convert 'n' HZ a.c into d.c, then the...

    Text Solution

    |

  14. If the input frequency of half-wave rectifier is n Hz ac, then its out...

    Text Solution

    |

  15. p-n junction diode acts as

    Text Solution

    |

  16. The process of converting alternating current into direct current is k...

    Text Solution

    |

  17. On increasing reverse voltage in a p-n junction diode the value of rev...

    Text Solution

    |

  18. In forward bias the depletion layer behaves like

    Text Solution

    |

  19. p-n junction in reverse bias behaves like

    Text Solution

    |

  20. The main cause of avalence breakdown is

    Text Solution

    |