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The objective of adding impurities in th...

The objective of adding impurities in the extrinsic semiconductor is

A

to increase the conductivity of the semiconductor

B

to increase the density of total current carries

C

to increase the density of either holes or electrons but not both

D

to eliminate the electron-hole pairs produced in intrinsic semiconductor.

Text Solution

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The correct Answer is:
C
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NARAYNA-SEMI CONDUCTOR DEVICES-C.U.Q
  1. To obtain n-type extrinsic semiconductor, the impurity element to be a...

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  2. The majority carries in a p-type semiconductor are….

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  3. The objective of adding impurities in the extrinsic semiconductor is

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  4. In intrinsic semiconductor conductivity is

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  5. In intrinsic semiconductor conductivity is due to.

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  6. When the conductivity of a semiconductor is only due to breaking of co...

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  7. Assertion (A) : C,Si and Ge have 4 Valancy each both but C is an insul...

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  8. The potential barrier at PN junction is due to

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  9. A PN junction diode cannot be used

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  10. A full wave rectifier with the output is shown in fig. the contributio...

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  11. A full-wave rectifier is used to convert 'n' HZ a.c into d.c, then the...

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  12. If the input frequency of half-wave rectifier is n Hz ac, then its out...

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  13. p-n junction diode acts as

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  14. The process of converting alternating current into direct current is k...

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  15. On increasing reverse voltage in a p-n junction diode the value of rev...

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  16. In forward bias the depletion layer behaves like

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  17. p-n junction in reverse bias behaves like

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  18. The main cause of avalence breakdown is

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  19. The main cause of Zener breakdown is.

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  20. When p-n junction is forward biased, the current across the junction i...

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