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Considering a.p-n junction as a capacito...

Considering `a.p-n` junction as a capacitor, forward with `p` and `n` material acting as thin metal electrodes and depletion layer width acting as seperation between them. Basing on this assume that a `n-p-n` transistor is working as an amplifier in `CE` configuration. If `C_(1)` and `C_(2)` are base-emiter and collector emitter junction capacitances, then :

A

`C_(1) gt C_(2)`

B

`C_(1) lt C_(2)`

C

`C_(1) = C_(2)`

D

`C_(1) = C_(2) = 0`

Text Solution

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A
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