In a `p-n` junction diode the thickness of deplection layer is `2 xx 10^(-6) m` and barrier potential is `0.3 V`. The intensity of the electrical field at the junction is.

Options

A. `0.6 xx 10^(-6) Vm^(-1)` from `n` to `p` side
B. `0.6 xx 10^(-6) Vm^(-1)` from `p` to `n` side
C. `1.5 xx 10^(5) Vm^(1)` from `n` to `p` side
D. `1.5 xx 10^(5) Vm^(-1)` from `p` to `n` side.

Answer

C

Explanation

`E=(v)/(d)=(0.3)/(2 xx 10^(-6)) =1.5 xx 10^(5) Vm^(-1)`
Its direction from `n` to `p` side.