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Pure Si at 300 K has equal electron (n(e...

Pure Si at 300 K has equal electron `(n_(e))` and hole `(n_(h))` concentrations of `1.5xx10^(16)m^(-3)` doping by indium increases `n_(h)` to `4.5xx10^(22)m^(-3)`. Caculate `n_(e)` in the doped Si-

A

`5.0 xx 10^(9) m^(-3)`

B

`6.0 xx 10^(6) m^(-3)`

C

`7.0 xx 10^(3) m^(-3)`

D

`4.0 xx 10^(9) m^(-3)`

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A
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