The band gap in Germanium and silicon in eV respectively is

Options

A. `0.7,1.1`
B. `1.1,0.7`
C. `1.1,0`
D. `0,1.1`

Answer

To determine the band gap in Germanium and Silicon in electron volts (eV), we can follow these steps:

### Step-by-Step Solution:

1. **Understanding Band Gap**:
The band gap (ΔE) is defined as the energy difference between the conduction band and the valence band in a semiconductor. It is a crucial parameter that determines the electrical properties of the material.

2. **Identify the Bands**:
- The **Conduction Band** is where electrons can move freely and conduct electricity.
- The **Valence Band** is the energy band where electrons are bound to atoms and do not conduct electricity.

3. **Band Gap in Germanium**:
Germanium is known to be a high semiconductor. The band gap (ΔE) for Germanium is approximately **0.66 eV**. This indicates that there is a significant energy difference between the conduction band and the valence band.

4. **Band Gap in Silicon**:
Silicon, on the other hand, has a band gap of about **1.1 eV**. This means that the conduction band and valence band are separated by a larger energy difference compared to Germanium.

5. **Conclusion**:
Therefore, the band gaps in Germanium and Silicon are approximately:
- Germanium: **0.66 eV**
- Silicon: **1.1 eV**

### Final Answer:
The band gap in Germanium and Silicon in eV respectively is **0.66 eV and 1.1 eV**.

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