Home
Class 12
PHYSICS
Consider the following statements A and ...

Consider the following statements `A` and `B` and identify the correct answer
(A) A Zener diode is always connected in reverse bias to use it as voltage regulator.
(B) The potential barrier of a `p-n` junction lies between `0.1` to `0.3 V`, approximately.

A

A and B are correct

B

A and B are wrong

C

A is correct but B is wrong

D

A is wrong but B is correct

Text Solution

Verified by Experts

The correct Answer is:
C
Promotional Banner

Topper's Solved these Questions

  • ELECTRONICS

    ERRORLESS |Exercise Digital Electronics|2 Videos
  • ELECTRONICS

    ERRORLESS |Exercise Valve Electronics (Diode and Triode)|3 Videos
  • ELECTRON, PHOTON, PHOTOELECTRIC EFFECT AND X-RAYS

    ERRORLESS |Exercise Self Evaluation Test|3 Videos
  • ELECTROSTATICS

    ERRORLESS |Exercise Ordinary Thinking Objective Questions (Electric Flux and Gauss.s Law)|28 Videos

Similar Questions

Explore conceptually related problems

Consider the following statements A and B and identify the correct answer. (A)A zener diode should be connected in reverse bias for proper functioning (B) The potential barrier of a p-n junction lies between 2 V and 5 V

Consider the folllowing statements i and ii and identify the correct choice of the given answers. A zener diode is always connected in reverse bias. The potential barrier of a p-n junction lies between 0.1 to 0.03 V approximately.

Consider the following statements A and B and identify the correct answer (1) : Germanium is preferred over silicon in the construction of zener diode. (2) : Germanium has high thermal stability than silicon in the construction of Zener diode.

Consider the following statements A to B and identify the correct answer A. Polarised light can be used to study the helical surface of nucleic acids. B. Optics axis is a direction and not any particular line in the crystal

Consider the following statement A and B and identify the correct choice of the given answers A: The width of the depletion layer in a P-N junction diode increases in forwards biase B: In an intrinsic semiconductor the fermi energy level is exactely in the middle of the forbidden gap

In Fig . V_(0) is the potential barrier across a p-n junction, when no battery is connected across the junction

In Fig. V_(0) is the potential barrier across a p-n junction, when no battery is connected across the junction : .

Consider the following statements A and B . Identify for correct in the given answer. A) p-n , p-p, n-n forces between nucleons are not equal and charge dependent. B) In nuclear reactor the fission reaction will be in accelerating state if the value of neutron reproduction factor K gt 1

Complete the following statements. and b_n=1-1_n then the smallest natural number n_0 , such that b_n > a_n !V n> n_0 is

ERRORLESS -ELECTRONICS-Selv Evaluation Test
  1. Consider the following statements A and B and identify the correct ans...

    Text Solution

    |

  2. In a pure silicon (n(i)=10^(16)//m^(3)) crystal at 300K, 10^(21) atoms...

    Text Solution

    |

  3. In the Boolean algebra bar(A).bar(B) equals is :-

    Text Solution

    |

  4. In the given circuit as shown the two input waveform A and B are appli...

    Text Solution

    |

  5. Two identical capacitors A and B are charged to the same potential V a...

    Text Solution

    |

  6. In transistor, forward bias is always smaller than the reverse bias. T...

    Text Solution

    |

  7. In NPN transistor, if doping in base region is increased then collecto...

    Text Solution

    |

  8. In the following circuit I(1) and I(2) are respectively

    Text Solution

    |

  9. In space charge limited region, the plate current in a diode is 10 mA ...

    Text Solution

    |

  10. A triode has a plate resistance of 10 k Omega and amplification factor...

    Text Solution

    |

  11. Pure sodium (Na) is a good conductor of electricity because the 3s and...

    Text Solution

    |

  12. Would there be any advantage to adding n-type or p-type impurities to ...

    Text Solution

    |

  13. In the following common emitter circuit if beta=100, V(CE)=7 V, V(BE)=...

    Text Solution

    |

  14. When a battery is connected to a P-type semiconductor with a metallic ...

    Text Solution

    |

  15. Is the ionisation energy of an isolated free atom different from the i...

    Text Solution

    |

  16. In the following circuit, a voltmeter V is connected across a lamp L. ...

    Text Solution

    |

  17. For given electric voltage signal dc value is

    Text Solution

    |

  18. When a silicon PN junction is in forwards biased condition with series...

    Text Solution

    |

  19. In the following circuit the equivalent resistance between A and B is

    Text Solution

    |

  20. In the following circuit of PN junction diodes D(1),D(2) and D(3) are ...

    Text Solution

    |

  21. In circuit in following figure the value of Y is-

    Text Solution

    |