Home
Class 12
PHYSICS
A potential difference of 2V is applied ...

A potential difference of `2V` is applied between the opposite faces of a `Ge` crystal plate of area `1 cm^(2)` and thickness `0.5 mm`. If the concentration of electrons in `Ge` is `2xx10^(19)//m^(3)` and mobilities of electrons and holes are `0.36(m^(2))/(vol t-sec)` and `0.14 (m^(2))/(vol t-sec)` respectively, then the current flowing through the plate will be

A

`0.25 A`

B

`0.45A`

C

`0.56 A`

D

`0.64 A`

Text Solution

Verified by Experts

The correct Answer is:
D
Promotional Banner

Topper's Solved these Questions

  • ELECTRONICS

    ERRORLESS |Exercise Digital Electronics|2 Videos
  • ELECTRONICS

    ERRORLESS |Exercise Valve Electronics (Diode and Triode)|3 Videos
  • ELECTRON, PHOTON, PHOTOELECTRIC EFFECT AND X-RAYS

    ERRORLESS |Exercise Self Evaluation Test|3 Videos
  • ELECTROSTATICS

    ERRORLESS |Exercise Ordinary Thinking Objective Questions (Electric Flux and Gauss.s Law)|28 Videos

Similar Questions

Explore conceptually related problems

A potential difference of 2V is applied between the opposite faces of a Ge crystal plate of area 1cm^(2) and thickness 0.5 mm. if the concentration of electrons in Ge is 2xx10^(19)//m^(3) and mobilities of electrons and holes are 0.36 (m^(2))/("volt-sec") and 0.14(m^(2))/("volt-sec") respectivity, then the current flowing through the plate will be-

In semiconductor the concentrations of electron and holes are 8xx10^(18)//m^(3) and 5xx10^(18)//m respectively. If the mobilities of electrons and hole are 2.3 m^(2)// volt-sec and 0.01m^(2)// volt-sec respectively, then semicondutor is

In a semiconductor the concentrations of electrons and holes are 8xx10^(18)//m^(3) and 5xx10^(18)//m^(3) respectively. If the mobilities of electrons and hole are 2.3m^(2)/"volt-sec" and 0.01m^(2)//"volt-sec" respectively, then semiconductor is-

The intrinsic conductivity of germanium at 27^(@) is 2.13 mho m^(-1) and mobilities of electrons and holes are 0.38 and 0.18 m^(2) V^(-1) s^(-1) respectively. The density of charge carriers is

Determine the conductivity of pure germanium at 27^(@)C . The concentration of the carriers at this temperature is 2.2 xx 10^(19)m^(-3) . The mobility of electrons = 0.36 and that of holes = 0.17

An intrinsic semiconductor has a resistivity of 0.50 Omega m at room temperature. Find the intrinsic carrier concentration if the mobilities of electrons and holes are 0.39 m^2 V^(-1) s^(-1) and 0.11 m^2 V^(-1) s^(-1) respectively

The potential difference between the plates of a parallel plate capacitor is 10V and separation is 5 cm. Find the energy density between plates. ( epsilon_0=10^(-11) F/m)

ERRORLESS -ELECTRONICS-Selv Evaluation Test
  1. A potential difference of 2V is applied between the opposite faces of ...

    Text Solution

    |

  2. In a pure silicon (n(i)=10^(16)//m^(3)) crystal at 300K, 10^(21) atoms...

    Text Solution

    |

  3. In the Boolean algebra bar(A).bar(B) equals is :-

    Text Solution

    |

  4. In the given circuit as shown the two input waveform A and B are appli...

    Text Solution

    |

  5. Two identical capacitors A and B are charged to the same potential V a...

    Text Solution

    |

  6. In transistor, forward bias is always smaller than the reverse bias. T...

    Text Solution

    |

  7. In NPN transistor, if doping in base region is increased then collecto...

    Text Solution

    |

  8. In the following circuit I(1) and I(2) are respectively

    Text Solution

    |

  9. In space charge limited region, the plate current in a diode is 10 mA ...

    Text Solution

    |

  10. A triode has a plate resistance of 10 k Omega and amplification factor...

    Text Solution

    |

  11. Pure sodium (Na) is a good conductor of electricity because the 3s and...

    Text Solution

    |

  12. Would there be any advantage to adding n-type or p-type impurities to ...

    Text Solution

    |

  13. In the following common emitter circuit if beta=100, V(CE)=7 V, V(BE)=...

    Text Solution

    |

  14. When a battery is connected to a P-type semiconductor with a metallic ...

    Text Solution

    |

  15. Is the ionisation energy of an isolated free atom different from the i...

    Text Solution

    |

  16. In the following circuit, a voltmeter V is connected across a lamp L. ...

    Text Solution

    |

  17. For given electric voltage signal dc value is

    Text Solution

    |

  18. When a silicon PN junction is in forwards biased condition with series...

    Text Solution

    |

  19. In the following circuit the equivalent resistance between A and B is

    Text Solution

    |

  20. In the following circuit of PN junction diodes D(1),D(2) and D(3) are ...

    Text Solution

    |

  21. In circuit in following figure the value of Y is-

    Text Solution

    |