Home
Class 12
PHYSICS
The plate characteristic curve of a diod...

The plate characteristic curve of a diode in space charge limited region is as shown in the figure. The slope of curve at point P is `5.0` mA / V . The static plate resistance of diode will be

A

`111.1 Omega`

B

`222.2 Omega`

C

`333.3 Omega`

D

`444.4 Omega`

Text Solution

Verified by Experts

The correct Answer is:
C
Promotional Banner

Topper's Solved these Questions

  • ELECTRONICS

    ERRORLESS |Exercise Digital Electronics|2 Videos

  • ELECTRONICS

    ERRORLESS |Exercise Valve Electronics (Diode and Triode)|3 Videos

  • ELECTRON, PHOTON, PHOTOELECTRIC EFFECT AND X-RAYS

    ERRORLESS |Exercise Self Evaluation Test|3 Videos

  • ELECTROSTATICS

    ERRORLESS |Exercise Ordinary Thinking Objective Questions (Electric Flux and Gauss.s Law)|28 Videos

Similar Questions

Explore conceptually related problems

The slope of plate characteristic of a vacuum diode is 2xx10^(-2)mA//V . The plate resistance of diode will be

The V-I characteristic of a diode is shown in the figure. The ratio of forward to reverse bias resistance is

Three large plates having uniform surface charge densities are shown in figure. Electric field at point 'P' will be :

The V-I characteristic of a silicon diode is shown in figure . The resistance of the diode at I_D =15 mA is

The characteristic curve for a diode is shown in the figure for forward bias mode. The cut-off voltage for this diode is approximately-

At a plate potential of 150 V the palte current in a diode is 8 mA under space charge limited conditions if the plate potential is changed to 300 V the plate current is

In a diode valve the space-charge limited current at 100 V is 100 mA. What is the space-charge current at 150 V ?

The resistance of a germanium junction diode, whose V –I characteristics is shown in the figure , will be ( v_k= 0.3 V ) .

ERRORLESS -ELECTRONICS-Selv Evaluation Test
  1. The plate characteristic curve of a diode in space charge limited regi...

    Text Solution

    |

  2. In a pure silicon (n(i)=10^(16)//m^(3)) crystal at 300K, 10^(21) atoms...

    Text Solution

    |

  3. In the Boolean algebra bar(A).bar(B) equals is :-

    Text Solution

    |

  4. In the given circuit as shown the two input waveform A and B are appli...

    Text Solution

    |

  5. Two identical capacitors A and B are charged to the same potential V a...

    Text Solution

    |

  6. In transistor, forward bias is always smaller than the reverse bias. T...

    Text Solution

    |

  7. In NPN transistor, if doping in base region is increased then collecto...

    Text Solution

    |

  8. In the following circuit I(1) and I(2) are respectively

    Text Solution

    |

  9. In space charge limited region, the plate current in a diode is 10 mA ...

    Text Solution

    |

  10. A triode has a plate resistance of 10 k Omega and amplification factor...

    Text Solution

    |

  11. Pure sodium (Na) is a good conductor of electricity because the 3s and...

    Text Solution

    |

  12. Would there be any advantage to adding n-type or p-type impurities to ...

    Text Solution

    |

  13. In the following common emitter circuit if beta=100, V(CE)=7 V, V(BE)=...

    Text Solution

    |

  14. When a battery is connected to a P-type semiconductor with a metallic ...

    Text Solution

    |

  15. Is the ionisation energy of an isolated free atom different from the i...

    Text Solution

    |

  16. In the following circuit, a voltmeter V is connected across a lamp L. ...

    Text Solution

    |

  17. For given electric voltage signal dc value is

    Text Solution

    |

  18. When a silicon PN junction is in forwards biased condition with series...

    Text Solution

    |

  19. In the following circuit the equivalent resistance between A and B is

    Text Solution

    |

  20. In the following circuit of PN junction diodes D(1),D(2) and D(3) are ...

    Text Solution

    |

  21. In circuit in following figure the value of Y is-

    Text Solution

    |