Home
Class 12
PHYSICS
Assertion: A P-N photodiode is made fro...

Assertion: A `P-N` photodiode is made from a semiconductor for which `E_(g)=2.8 eV`. This photo diode will not detect the wavelength of `6000 nm`.
Reason: A `PN` photodiode detect wavelength `lambda` if `(hc)/(lambda)gtE_(g)`.

A

If both assertion and reason are true and the reason is the correct explanation of the assertion.

B

If both assertion and reason are true but reason is not the correct explanation of the assertion.

C

If assertion is true but reason is false.

D

If the assertion and reason both are false.

Text Solution

Verified by Experts

The correct Answer is:
A
Promotional Banner

Topper's Solved these Questions

  • ELECTRONICS

    ERRORLESS |Exercise Digital Electronics|2 Videos
  • ELECTRONICS

    ERRORLESS |Exercise Valve Electronics (Diode and Triode)|3 Videos
  • ELECTRON, PHOTON, PHOTOELECTRIC EFFECT AND X-RAYS

    ERRORLESS |Exercise Self Evaluation Test|3 Videos
  • ELECTROSTATICS

    ERRORLESS |Exercise Ordinary Thinking Objective Questions (Electric Flux and Gauss.s Law)|28 Videos

Similar Questions

Explore conceptually related problems

A p-n photodiode is fabricated from a semiconductor with band gap of 2.8 eV can it detect a wavelength of 6000 nm

A P-N photodiode is fabricated from a semiconductor with a band gap of 2.5 eV. It can detect a signal of wavelength :-

A p-n junction is fabricated from a semiconductor with band gap of 2.8eV . Can it detect a wavelength of 6000nm ?

A p - n photodiode is fabricated from a semiconductor with band gap of 2.8 eV. Which of the following wavelengths it can detect?

A p-n photodiode is fabricated from a semiconductor with a band gap of 2.5 eV . It can detect a signal of wavelength

A p-n photodiode is fabricate from a semiconductor with a band gap of 2.5eV . It can detect a singal of wavelength

ERRORLESS -ELECTRONICS-Selv Evaluation Test
  1. Assertion: A P-N photodiode is made from a semiconductor for which E(...

    Text Solution

    |

  2. In a pure silicon (n(i)=10^(16)//m^(3)) crystal at 300K, 10^(21) atoms...

    Text Solution

    |

  3. In the Boolean algebra bar(A).bar(B) equals is :-

    Text Solution

    |

  4. In the given circuit as shown the two input waveform A and B are appli...

    Text Solution

    |

  5. Two identical capacitors A and B are charged to the same potential V a...

    Text Solution

    |

  6. In transistor, forward bias is always smaller than the reverse bias. T...

    Text Solution

    |

  7. In NPN transistor, if doping in base region is increased then collecto...

    Text Solution

    |

  8. In the following circuit I(1) and I(2) are respectively

    Text Solution

    |

  9. In space charge limited region, the plate current in a diode is 10 mA ...

    Text Solution

    |

  10. A triode has a plate resistance of 10 k Omega and amplification factor...

    Text Solution

    |

  11. Pure sodium (Na) is a good conductor of electricity because the 3s and...

    Text Solution

    |

  12. Would there be any advantage to adding n-type or p-type impurities to ...

    Text Solution

    |

  13. In the following common emitter circuit if beta=100, V(CE)=7 V, V(BE)=...

    Text Solution

    |

  14. When a battery is connected to a P-type semiconductor with a metallic ...

    Text Solution

    |

  15. Is the ionisation energy of an isolated free atom different from the i...

    Text Solution

    |

  16. In the following circuit, a voltmeter V is connected across a lamp L. ...

    Text Solution

    |

  17. For given electric voltage signal dc value is

    Text Solution

    |

  18. When a silicon PN junction is in forwards biased condition with series...

    Text Solution

    |

  19. In the following circuit the equivalent resistance between A and B is

    Text Solution

    |

  20. In the following circuit of PN junction diodes D(1),D(2) and D(3) are ...

    Text Solution

    |

  21. In circuit in following figure the value of Y is-

    Text Solution

    |