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Mobilities of electorns and holes in a s...

Mobilities of electorns and holes in a sample of intrinsic germanium at room temperature are `0.54m^(2)V^(-1)s^(-1)` and `0.18m^(2)V^(-1)s^(-1)` respectively.
If the electron and hole densities are equal to `3.6xx10^(19)m^(-3)` calculate the germanium conductivity.

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Mobilities of electrons and holes for an intrinsic silicon is 0.64m^(2)V^(-1)S^(-1) and 0.36 m^(2)V^(-1)s^(-1) respectively. If the electron and hole densities are equal to 1.6xx10^(19) m^(-3) . What is the conductivity of silicon ?

Mobilities of electrons and holes in a sample of a semiconductor is 25000 cm^(2) V^(-1) s^(-1) and 200 cm^(2) Vs respectively if the electron and hole concentration are 9 xx10^(13) per cm^(3) and 4xx10^(12) per cm^(3) respectively calculate the conductivity of the sample

Knowledge Check

  • Mobility of electron and holes in a sample of intristic germanium at room temperature are 0.36m^(2)V^(-1)s^(-1) and 0.17 m^(2)V^(-1)s^(-1) . The electron and hole densities are each equal to 2.5xx10^(19) m^(-3) . The electrical conductivity of germanium is

    A
    `0.47Sm^(-1)`
    B
    `1.09 Sm^(-1)`
    C
    `2.12Sm^(-1)`
    D
    `4.24 Sm^(-1)`

  • Mobilities of electrons and holes in a sample of intrinsic germanium at room temperature are 0.36 m^(2)//Vs and 0.17 m^(2)//Vs . The electron and hole densities are each equal to 2.5 xx 10^(19) m^(-3) . The electrical conductivity of germanium is.

    A
    `0.47 S//m`
    B
    `5.18 S//m`
    C
    `2.12 S//m`
    D
    `1.09 S//m`

  • The number densities of electrons and holes in a pure germanium at room temperature are equal and its value is 2xx 10^(16) per m^(3) . On doping with aluminium the hole density increases to 3.5 xx10^(22) per m^(3) , then the electron density in doped germanium is

    A
    `1.1xx10^(10)m^(-3)`
    B
    `2.2xx10^(9)m^(-3)`
    C
    `3.3xx10^(9)m^(-3)`
    D
    `4.4 xx 10^(9)m^(-3)`

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    If resistivity of pure silicon is 3000Omegam , and the electron and hole mobilities are 0.12 m^(2)V^(-1)s^(-1) and 0.045m^(2)V^(-1)s^(-1) respectively, determine the resistivity of a specimen of the material when 10^(19) atoms of phosphorous are added per m^(3) are also added. Given charge on electron =1.6xx10^(-19)C .

    The intrinsic conductivity of germanium at 27^(@) is 2.13 mho m^(-1) and mobilities of electrons and holes are 0.38 and 0.18 m^(2) V^(-1) s^(-1) respectively. The density of charge carriers is

    If resistivity of pure silicon is 3000 Omega m and the electron and hole mobilities are 0.12m^(2)v^(-1)s^(-1) and 0.045 m^(2)v^(-1)s^(-1) respectively, determine. The resistivity of a specimen of the material when 10^(19) atoms of phosphorous are added per m^(3) Given e=1.6 xx10^(-19) c, rho =3000Omega, u_(e)=0.12m^(2)v^(-1)s^(-1), u_(h)=0.045m^(2)v^(-1)s^(-1)

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