In a forward biased p-n junction diode, the potential barrier in the depletion region will be of the form

Options

A.
B.
C.
D.

Answer

To solve the question regarding the potential barrier in a forward-biased p-n junction diode, we will analyze the behavior of the diode under forward bias conditions step by step.

### Step-by-Step Solution:

1. **Understanding Forward Bias**:
- In a forward-biased p-n junction diode, the p-type material is connected to the positive terminal of the battery, and the n-type material is connected to the negative terminal. This reduces the potential barrier at the junction.

**Hint**: Remember that forward bias means the p-side is positive and the n-side is negative.

2. **Potential Barrier Reduction**:
- The application of forward bias causes the potential barrier to decrease. The depletion region becomes narrower as the majority carriers (holes from the p-side and electrons from the n-side) are pushed towards the junction.

**Hint**: Think about how applying voltage affects the movement of charge carriers in the diode.

3. **Graphical Representation**:
- The potential barrier across the depletion region can be represented graphically. In forward bias, the potential across the junction is not constant; it varies linearly across the depletion region.

**Hint**: Visualize how the potential changes from the p-side to the n-side when a forward bias is applied.

4. **Choosing the Correct Option**:
- Among the given options, we need to identify the graph that shows a linear decrease in potential across the depletion region. The correct graph will depict a lower potential barrier width compared to reverse bias.

**Hint**: Look for a graph that shows a decreasing potential from the p-side to the n-side, indicating a reduction in the potential barrier.

5. **Conclusion**:
- After analyzing the options, we find that the correct representation of the potential barrier in a forward-biased p-n junction diode is shown in option A, which illustrates a narrower depletion region and a linear potential drop.

**Hint**: Confirm that the chosen option reflects the characteristics of a forward-biased diode, focusing on the width of the depletion region and the potential drop.

### Final Answer:
The potential barrier in the depletion region of a forward-biased p-n junction diode will be of the form represented by option A.