Home
Class 12
PHYSICS
If a semiconductor has an intrinsic carr...

If a semiconductor has an intrinsic carrier concentration of `1.41 xx 10^(16)//m^(3)` when doped with `10^(21)//m^(3)` at room temperature will be

A

`2 xx 10^(21)`

B

`2 xx 10^(11)`

C

`1.41 xx 10^(10)`

D

`1.41 xx 10^(16)`

Text Solution

AI Generated Solution

The correct Answer is:
To solve the problem, we need to analyze the effect of doping on the intrinsic carrier concentration of a semiconductor. Here’s a step-by-step breakdown of the solution: ### Step 1: Understand Intrinsic Carrier Concentration The intrinsic carrier concentration (n_i) of the semiconductor is given as: \[ n_i = 1.41 \times 10^{16} \, \text{m}^{-3} \] ### Step 2: Understand Doping Concentration The doping concentration (N_d) is given as: \[ N_d = 10^{21} \, \text{m}^{-3} \] ### Step 3: Determine the Type of Doping Since the doping concentration is significantly higher than the intrinsic carrier concentration, we can assume that the semiconductor is heavily doped. In this case, we can consider it as n-type doping, which means that the majority carriers will be electrons. ### Step 4: Calculate the Majority and Minority Carriers For n-type semiconductors, the majority carrier concentration (n) can be approximated as the doping concentration (N_d) when it is much larger than the intrinsic concentration: \[ n \approx N_d = 10^{21} \, \text{m}^{-3} \] The minority carrier concentration (p) can be calculated using the mass action law: \[ n \cdot p = n_i^2 \] Where \( n_i \) is the intrinsic carrier concentration. ### Step 5: Calculate Minority Carrier Concentration Using the values: \[ n_i = 1.41 \times 10^{16} \, \text{m}^{-3} \] We can find p: \[ p = \frac{n_i^2}{n} = \frac{(1.41 \times 10^{16})^2}{10^{21}} \] Calculating \( n_i^2 \): \[ n_i^2 = (1.41 \times 10^{16})^2 = 1.9881 \times 10^{32} \, \text{m}^{-6} \] Now substituting back to find p: \[ p = \frac{1.9881 \times 10^{32}}{10^{21}} = 1.9881 \times 10^{11} \, \text{m}^{-3} \] ### Step 6: Conclusion Thus, after doping, the majority carrier concentration (n) will be approximately \( 10^{21} \, \text{m}^{-3} \) and the minority carrier concentration (p) will be approximately \( 1.9881 \times 10^{11} \, \text{m}^{-3} \). ### Final Answer - Majority carrier concentration (n) = \( 10^{21} \, \text{m}^{-3} \) - Minority carrier concentration (p) = \( 1.9881 \times 10^{11} \, \text{m}^{-3} \)

To solve the problem, we need to analyze the effect of doping on the intrinsic carrier concentration of a semiconductor. Here’s a step-by-step breakdown of the solution: ### Step 1: Understand Intrinsic Carrier Concentration The intrinsic carrier concentration (n_i) of the semiconductor is given as: \[ n_i = 1.41 \times 10^{16} \, \text{m}^{-3} \] ### Step 2: Understand Doping Concentration The doping concentration (N_d) is given as: ...
Promotional Banner

Topper's Solved these Questions

  • SEMICONDUCTOR DEVICES AND LOGIC GATES

    BITSAT GUIDE|Exercise BITSAT Archives|5 Videos
  • RAY OPTICS

    BITSAT GUIDE|Exercise All Questions|39 Videos
  • SOLVED PAPER 2017

    BITSAT GUIDE|Exercise (PART -I) PHYSICS |40 Videos

Similar Questions

Explore conceptually related problems

A semiconductor has an intrinsic carrier concentration of 1.41 xx 10^(16) m^-3 . When doped with 10^(21) m^-3 phosphorus, the concentration of holes at room temperature is n xx 10^(11) / m^3 . Find n .

What is the conductivity of a semiconductor sample having electron concentration of 5 xx 10^(18) m^(-3) hole concentration of 5 xx 10^(19) m^(-3) , electron mobility of 2.0 m^(2) V^(-1) s^(-1) and hole mobility of 0.01 m^(2) V^(-1) s^(-1)? (Take charge of electron as 1.6 xx 10^(-19)C)

A semiconductor is known to have an electron concentration of 5 xx 10^(13)//cm^(3) and hole concentration of 8 xx 10^(12)//cm^(3) . The semiconductor is

A crystal of intrinsic silicon at room temperature has a carrier concentration of 1.6xx10^(16)m^(-3) . If the donor concentration level is 4.8xx10^(20) m^(-3) , then the concentration of holes in the semiconductor is

A semiconductor has equal electron and hole concentration of 6xx 10^(4)m^(-3) . On doping with a certain impurity, electron concentration increases to 8 xx 10^(12)m^(-3) . Identify the type of semiconductor.