Doping of silicon (Si) with boron (B) leads to:

Options

A. n-type semiconductor
B. Insulator
C. Metal
D. p-type semiconductor

Answer

**Step-by-Step Solution:**

1. **Understanding Doping**: Doping is the process of adding impurities to a semiconductor to change its electrical properties. In this case, we are doping silicon (Si) with boron (B).

2. **Electron Configuration**: Silicon has four valence electrons (4) while boron has three valence electrons (3). When boron is introduced into the silicon lattice, it replaces some silicon atoms.

3. **Formation of Holes**: Since boron has only three valence electrons, it cannot form four bonds with neighboring silicon atoms. This results in the creation of "holes" where an electron is missing. A hole can be thought of as a positive charge carrier.

4. **Movement of Holes**: The holes can move through the silicon lattice. When an electron from a neighboring silicon atom fills a hole, it creates a new hole in its original position. This movement of holes can be visualized as a positive charge moving through the material.

5. **P-Type Semiconductor**: The presence of holes as charge carriers leads to the classification of the doped silicon as a P-type semiconductor. In P-type semiconductors, the majority charge carriers are holes, while the minority carriers are electrons.

6. **Conclusion**: Therefore, doping silicon with boron results in the formation of a P-type semiconductor, characterized by the presence of holes as the primary charge carriers.

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