The breakdown in a reverse biased p-n junction diode is more likely to occur due to

Options

A. large velocity of the minority charge carriers if the dopping concentration is small
B. large velocity of the minority charge carriers if the dopping concentration is large
C. strong electric field in a depletion region if the droping concentration is small
D. strong electric field in the depletion region if the doping concentration is large.

Answer

A, D

Explanation

In reverse biasing, the minority charge carries will be accelerated due to reverse biased which on striking with atoms cause ionization resulting secondary electrons and thus more number of change carries.
When doping concentration is large, there will be large number of ions in the depled region, which will give rise to a strong electric field.