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A p-n junction has acceptor impurity con...

A p-n junction has acceptor impurity concentration of `10^(17) cm^(-3)` in the p-side and donor impurity concentration of `10^(16)cm^(-3)` in the n-side. What is the contact potential at the junction? (kT=thermal energy , instrinsic carrier concentration `n_(i)=1.6xx10^(10) cm^(-3)`

A

`((kT)/(e ))ln(4xx10^(12))`

B

`((kT)/(e ))ln(2.5xx10^(23))`

C

`((kT)/(e ))ln(10^(23))`

D

`((kT)/(e ))ln(10^(9))`

Text Solution

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The correct Answer is:
A
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