Assertion(A) : When sodium chloride dissolves in water, then `Na^(+)` and `Cl^(-)` ions leaving the crystal lattice acquire far greater freedon.
Reason(R ) : In thermodynamic terms, the formation of solution occurs with a favourable change in energy i.e., `DeltaH` has a high positive value and `TDeltaS` has a low negative value.
Assertion(A) : When sodium chloride dissolves in water, then `Na^(+)` and `Cl^(-)` ions leaving the crystal lattice acquire far greater freedon.
Reason(R ) : In thermodynamic terms, the formation of solution occurs with a favourable change in energy i.e., `DeltaH` has a high positive value and `TDeltaS` has a low negative value.
Reason(R ) : In thermodynamic terms, the formation of solution occurs with a favourable change in energy i.e., `DeltaH` has a high positive value and `TDeltaS` has a low negative value.
A
Both `A`and `R` are true and `R` is the correct explantion of `A`
B
Both `A`and `R` are true and `R` is not a correct explantion of `A`
C
`A` is true but `R` is false
D
`A` is false but `R` is true
Text Solution
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The correct Answer is:
C
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For a process top be spontaneous, at constant temperature and pressure, there must be decreases in free energy of the system in the direction of the process, i.e. DeltaG_(P.T.)lt0.Delta_(P.T.)=0 implies the equilibrium condition and DeltaG_(P.T.)gt0 corresponding to non-spontaneity. Gibb's Helmholtz equation relates the free energy change to the enthalpy and entropy change of the process as : DeltaG_(P.T.)=DeltaH-TDeltaS ......(i) The magnitude of Delta H does not change much with the change in temperature but the entropy factor TDeltaS changes appreciably. Thus, spontaneity of a process depends very much on temperature. For edothermic proces, both DeltaH "and " DeltaS are positive. The energy factor,the first factor of equation, opposes the spontaneity whereas entropy factor favours it . At low temperature, the favourable factor TDeltaS will be small and may be less than Delta H, DeltaG will have positive value indicating the non-spontaneity of the process. On raising temperature, the factor TDeltaS increases appreciably and when it exceeds DeltaH,DeltaG would become negative and the process would be spontaneous. For an exothermic process, both DeltaH " and " DeltaS would be negative. In this case, the first factor of equation(i) favours the spontaneity whereas the second factor opposes it. At high temperature, when TDeltaSgt DeltaH, DeltaG will have positive value, showing thereby the non-spontaneity of the process. However, on decreasing temperature, the factore TDeltaSlt DeltaH,DeltaG becomes negative and the process occurs spontaneously. Thus, an exothermic process may be spontaneous at low temperature and non-spontaneous at high temperature. A reaction has a value of DeltaH =-40 kcal at 400K . Above 400K, the reaction is spontaneous, below this temperature, it is not. The value of DeltaG " and "DeltaS at 400K are respectively:
For a process top be spontaneous, at constant temperature and pressure, there must be decreases in free energy of the system in the direction of the process, i.e. DeltaG_(P.T.)lt0.Delta_(P.T.)=0 implies the equilibrium condition and DeltaG_(P.T.)gt0 corresponding to non-spontaneity. Gibb's Helmholtz equation relates the free energy change to the enthalpy and entropy change of the process as : DeltaG_(P.T.)=DeltaH-TDeltaS ......(i) The magnitude of Delta H does not change much with the change in temperature but the entropy factor TDeltaS changes appreciably. Thus, spontaneity of a process depends very much on temperature. For edothermic proces, both DeltaH "and " DeltaS are positive. The energy factor,the first factor of equation, opposes the spontaneity whereas entropy factor favours it . At low temperature, the favourable factor TDeltaS will be small and may be less than Delta H, DeltaG will have positive value indicating the non-spontaneity of the process. On raising temperature, the factor TDeltaS increases appreciably and when it exceeds DeltaH,DeltaG would become negative and the process would be spontaneous. For an exothermic process, both DeltaH " and " DeltaS would be negative. In this case, the first factor of equation(i) favours the spontaneity whereas the second factor opposes it. At high temperature, when TDeltaSgt DeltaH, DeltaG will have positive value, showing thereby the non-spontaneity of the process. However, on decreasing temperature, the factore TDeltaSlt DeltaH,DeltaG becomes negative and the process occurs spontaneously. Thus, an exothermic process may be spontaneous at low temperature and non-spontaneous at high temperature. The enthalpy change for a certain reaction at 300K is -15.0 k cal mol^(-1) . The entropy change under these conditions is -7.2 cal K^(-1) mol ^(-1) . The free energy change for the reaction and its spontaneous/non-spontaneous character will be :
For a process top be spontaneous, at constant temperature and pressure, there must be decreases in free energy of the system in the direction of the process, i.e. DeltaG_(P.T.)lt0.Delta_(P.T.)=0 implies the equilibrium condition and DeltaG_(P.T.)gt0 corresponding to non-spontaneity. Gibb's Helmholtz equation relates the free energy change to the enthalpy and entropy change of the process as : DeltaG_(P.T.)=DeltaH-TDeltaS ......(i) The magnitude of Delta H does not change much with the change in temperature but the entropy factor TDeltaS changes appreciably. Thus, spontaneity of a process depends very much on temperature. For edothermic proces, both DeltaH "and " DeltaS are positive. The energy factor,the first factor of equation, opposes the spontaneity whereas entropy factor favours it . At low temperature, the favourable factor TDeltaS will be small and may be less than Delta H, DeltaG will have positive value indicating the non-spontaneity of the process. On raising temperature, the factor TDeltaS increases appreciably and when it exceeds DeltaH,DeltaG would become negative and the process would be spontaneous. For an exothermic process, both DeltaH " and " DeltaS would be negative. In this case, the first factor of equation(i) favours the spontaneity whereas the second factor opposes it. At high temperature, when TDeltaSgt DeltaH, DeltaG will have positive value, showing thereby the non-spontaneity of the process. However, on decreasing temperature, the factore TDeltaSlt DeltaH,DeltaG becomes negative and the process occurs spontaneously. Thus, an exothermic process may be spontaneous at low temperature and non-spontaneous at high temperature. When CaCO_(3) is heated to a high temperature, it undergoes decomposition into CaO and CO_(2) whereas it is quite stable at room temperature. The most likely explanation of it, is:
For a process top be spontaneous, at constant temperature and pressure, there must be decreases in free energy of the system in the direction of the process, i.e. DeltaG_(P.T.)lt0.Delta_(P.T.)=0 implies the equilibrium condition and DeltaG_(P.T.)gt0 corresponding to non-spontaneity. Gibb's Helmholtz equation relates the free energy change to the enthalpy and entropy change of the process as : DeltaG_(P.T.)=DeltaH-TDeltaS ......(i) The magnitude of Delta H does not change much with the change in temperature but the entropy factor TDeltaS changes appreciably. Thus, spontaneity of a process depends very much on temperature. For edothermic proces, both DeltaH "and " DeltaS are positive. The energy factor,the first factor of equation, opposes the spontaneity whereas entropy factor favours it . At low temperature, the favourable factor TDeltaS will be small and may be less than Delta H, DeltaG will have positive value indicating the non-spontaneity of the process. On raising temperature, the factor TDeltaS increases appreciably and when it exceeds DeltaH,DeltaG would become negative and the process would be spontaneous. For an exothermic process, both DeltaH " and " DeltaS would be negative. In this case, the first factor of equation(i) favours the spontaneity whereas the second factor opposes it. At high temperature, when TDeltaSgt DeltaH, DeltaG will have positive value, showing thereby the non-spontaneity of the process. However, on decreasing temperature, the factore TDeltaSlt DeltaH,DeltaG becomes negative and the process occurs spontaneously. Thus, an exothermic process may be spontaneous at low temperature and non-spontaneous at high temperature. For the reaction 25^(@)C,X_(2)O_(2)(l) to 2XO_(2)(g)" "DeltaH=2.1 kcal and DeltaS=20 cal K^(-1) . The reaction would be:
For a process top be spontaneous, at constant temperature and pressure, there must be decreases in free energy of the system in the direction of the process, i.e. DeltaG_(P.T.)lt0.Delta_(P.T.)=0 implies the equilibrium condition and DeltaG_(P.T.)gt0 corresponding to non-spontaneity. Gibb's Helmholtz equation relates the free energy change to the enthalpy and entropy change of the process as : DeltaG_(P.T.)=DeltaH-TDeltaS ......(i) The magnitude of Delta H does not change much with the change in temperature but the entropy factor TDeltaS changes appreciably. Thus, spontaneity of a process depends very much on temperature. For edothermic proces, both DeltaH "and " DeltaS are positive. The energy factor,the first factor of equation, opposes the spontaneity whereas entropy factor favours it . At low temperature, the favourable factor TDeltaS will be small and may be less than Delta H, DeltaG will have positive value indicating the non-spontaneity of the process. On raising temperature, the factor TDeltaS increases appreciably and when it exceeds DeltaH,DeltaG would become negative and the process would be spontaneous. For an exothermic process, both DeltaH " and " DeltaS would be negative. In this case, the first factor of equation(i) favours the spontaneity whereas the second factor opposes it. At high temperature, when TDeltaSgt DeltaH, DeltaG will have positive value, showing thereby the non-spontaneity of the process. However, on decreasing temperature, the factore TDeltaSlt DeltaH,DeltaG becomes negative and the process occurs spontaneously. Thus, an exothermic process may be spontaneous at low temperature and non-spontaneous at high temperature. For the reaction at 298K, 2A+B toC" " Delta H =100 kcal and DeltaS= 0.050 kcal K^(-1) . If DeltaH " and " DeltaS are assumed to be constant over the temperature range, just above what temperature will be reaction become spontaneous?
In a ideal crystal there nust be regular repeating arrangement of the constuting particles and its entropy must be zero at absolute zero at absolute zero temperature. However, it is impossible to obtain an ideal crystal and it suffers from certain defects called imperfections. In pure crystal these defects arise either due to disorder or dislocation of the movement of the particles even at absolute zero temperature. Such defect increases with rise in temperature. In addition ti this, certain defects arise due to the pressure of some impurities. Such defects not only modify the existing properties of the crystalline solid but also impart certain new characteritics to them. In pure crystal, e.g, silicon or germanium at 0K, the electrons are prsent in fully occupied lowest energy states and are not xpected to conduct any electricity. However at temperature above 0K, some electron leave their bonds and become free to move in the crystal lattice, giving rise to and become free to move in the crystal lattice, giving rise to electrical conductivity. The electron deficient bonds, called holes (+vely charged) and thermally mobile electrons move in opposite direction under the electric field. Stoichiometric ppoint defects include (a) Schottky defects, which arise due to missing of both cations and anions from their lattice sites without disturbing the stoichiometry and (b) Frenked defects, which arise due to misplacement of certian ions in the crystal lattice. The former defect gives rise to no change of density. Another type of defects are non-stoichometry defects where the cetions and anion are not present in the stoichiometry ratio. In metal excess defect, metal ions or positive ions are in excess as compared to anions of non-metals stoichiometrycally. On the other hand in metal deficiency defect, the cations are in lesser proportion than stoichiometric value. Since the crystal is neutral electrically, the balance of charge is maintained by free electrons or extra positive charges. The metal excess defects gives rise to conduction of electricity due to the presence of free electrons. Also crystals having metal excess defects are paramagnetic and coloured due to the presence of electrons in the anion vacancies. Impurity defects arise when some foreign atoms are present at the lattice sites in place of the host atoms or at the vacant interstitial sites. When 15 group elements like P or are doped into Si or Ge, the added impurity atoms occupy the lattice sites forming four covalent bonds with 4 Si/Ge atoms leaving an extra electron free to move. Such a crystal is said to be n-type semi conductor because the conduction of electricity is due to movement of extra unbounded electrons. If doping of a covalent crystal of 14 group elements are caused by addition of small amounts of elements are caused by addition of small amounts of elements of group 13, e.g, Al or Ga with three valence electrons, one covalent bond formed will be electron deficient and acts as a positive hole. The presence of such holes in the crystal leads to electrical conductivity and the the crystal is said to be p-type semiconductor. Lattice defect per 10^(15)NaCl is 1. What is the number of lattice defects in 1 mole of NaCl?
In a ideal crystal there nust be regular repeating arrangement of the constuting particles and its entropy must be zero at absolute zero at absolute zero temperature. However, it is impossible to obtain an ideal crystal and it suffers from certain defects called imperfections. In pure crystal these defects arise either due to disorder or dislocation of the movement of the particles even at absolute zero temperature. Such defect increases with rise in temperature. In addition ti this, certain defects arise due to the pressure of some impurities. Such defects not only modify the existing properties of the crystalline solid but also impart certain new characteritics to them. In pure crystal, e.g, silicon or germanium at 0K, the electrons are prsent in fully occupied lowest energy states and are not xpected to conduct any electricity. However at temperature above 0K, some electron leave their bonds and become free to move in the crystal lattice, giving rise to and become free to move in the crystal lattice, giving rise to electrical conductivity. The electron deficient bonds, called holes (+vely charged) and thermally mobile electrons move in opposite direction under the electric field. Stoichiometric ppoint defects include (a) Schottky defects, which arise due to missing of both cations and anions from their lattice sites without disturbing the stoichiometry and (b) Frenked defects, which arise due to misplacement of certian ions in the crystal lattice. The former defect gives rise to no change of density. Another type of defects are non-stoichometry defects where the cetions and anion are not present in the stoichiometry ratio. In metal excess defect, metal ions or positive ions are in excess as compared to anions of non-metals stoichiometrycally. On the other hand in metal deficiency defect, the cations are in lesser proportion than stoichiometric value. Since the crystal is neutral electrically, the balance of charge is maintained by free electrons or extra positive charges. The metal excess defects gives rise to conduction of electricity due to the presence of free electrons. Also crystals having metal excess defects are paramagnetic and coloured due to the presence of electrons in the anion vacancies. Impurity defects arise when some foreign atoms are present at the lattice sites in place of the host atoms or at the vacant interstitial sites. When 15 group elements like P or are doped into Si or Ge, the added impurity atoms occupy the lattice sites forming four covalent bonds with 4 Si/Ge atoms leaving an extra electron free to move. Such a crystal is said to be n-type semi conductor because the conduction of electricity is due to movement of extra unbounded electrons. If doping of a covalent crystal of 14 group elements are caused by addition of small amounts of elements are caused by addition of small amounts of elements of group 13, e.g, Al or Ga with three valence electrons, one covalent bond formed will be electron deficient and acts as a positive hole. The presence of such holes in the crystal leads to electrical conductivity and the the crystal is said to be p-type semiconductor. The type of semiconduction shown by crystal capable of showing Schottky defect, will be :
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