Home
Class 12
PHYSICS
Suppose a pure Si-crystal has 5xx10^(28)...

Suppose a pure Si-crystal has `5xx10^(28) "atoms" m^(-3)`. It is doped by 1 ppm concentration of pentavalent As. Calculate the number of electrons and holes. Given that `n_(i)=1.5xx10^(16)m^(-3)`.

A

`4.5xx10^9 m^(-3)`

B

`4.5xx10^6 m^(-3)`

C

`2.5xx10^9 m^(-3)`

D

`2.5xx10^6 m^(-3)`

Text Solution

Verified by Experts

The correct Answer is:
A

The electron and holes concentration in a semiconductor in thermal equilibrium is
`n_e n_h=n_i^2`
or `n_h=n_i^2/n_e`
Here , `n_i=1.5xx10^16 m^(-3) , n_e=5xx10^22 m^(-3)`
`therefore n_h=((1.5xx10^16)^2)/((5xx10^22))=(2.25xx10^32)/(5xx10^22)=4.5xx10^9 m^(-3)`
Promotional Banner

Topper's Solved these Questions

  • SEMICONDUCTOR ELECTRONICS : MATERIALS , DEVICES AND SIMPLE CIRCUITS

    NCERT FINGERTIPS|Exercise P-N Junction|6 Videos
  • SEMICONDUCTOR ELECTRONICS : MATERIALS , DEVICES AND SIMPLE CIRCUITS

    NCERT FINGERTIPS|Exercise Semiconductor Diode|12 Videos
  • SEMICONDUCTOR ELECTRONICS : MATERIALS , DEVICES AND SIMPLE CIRCUITS

    NCERT FINGERTIPS|Exercise Intrinsic Semiconductor|6 Videos
  • RAY OPTICS AND OPTICAL INSTRUMENTS

    NCERT FINGERTIPS|Exercise Assertion And Reason|15 Videos
  • WAVE OPTICS

    NCERT FINGERTIPS|Exercise Assertion And Reason|15 Videos

Similar Questions

Explore conceptually related problems

Suppose a pure Si-crystal has 5xx10^(28) "atoms" m^(-3) . It is doped by 1 ppm concentration of pentavalent As. Calculate the number of electrons and holes. Give that n_(i)=1.5xx10^(16)m^(-3) .

Suppose a pure Si crystal has 6xx10^(28) atoms m^(-3) . It is doped by 1ppm concentration of pentavalent As. Calculate the number of electrons and holes, Given that n_(i)=0.5xx10^(16)m^(-3)

Pure Si crystal at 300 k has 2.5 xx10^(28) atoms m^(-3) it is doped by 1 ppm concentration of pentavalent element As calculate the new concentration of electrons and holes take n_(i) =1.5 xx10^(16) m^(-3)

The number of silicon atoms per m^(3) is 5xx10^(28) . This is doped simultaneously with 5xx10^(22) atoms per m^(3) of Arsenic and 5xx10^(20) per m^(3) atoms of indium. Calculate the number of electrons and holes. Given that n_(i)=1.5xx10^(16)m^(-3) . Is the material n-type or p-type?

Suppose a 'n'- type wafer is created by doping Si crystal having 5xx10^(28) "atoms"//m^(3) with 1 ppm concentration of As. On the surfabe 200 ppm Boron is added to create 'p' region in this wafer. Considering n_(i)=1.5xx10^(16)m^(-3) , (i) Calculate the densities of the charge carriers in the n & p regions. (ii) Comment which charge carriers would contribute largely for the reverse saturation current when diode is reverse biased.

Calculate the gyro magnetic ratio of electron (given 1.6 xx10^(-19) C, m_r=9.1xx10^(-3) kg )

A semiconductor crystal has equal electron and hole concentration of 9xx10^(8) m^(-3) it is doped by indium so that the hole concentration increases to 4.5 xx10^(12) m^(-3) calculate the new concentration of free electrons in the doped crystal nad also mention its type

A piece of pure semiconductor of silicn of size 1cm xx 1 cm xx 1 mm is having 5 xx 10^(28) number of atoms per cubic metre. It is doped simultaneously with 5 xx 10^(22) atoms per m^(3) of aresenic adn 5 xx 10^(20) per m^(3) atoms of indium. The number density of intrisic current carrier (electrons adn holes) in the pure silicon semiconductor is 1.5 xx 10^(16) m^(-3) . Mobility of electron is 3800 cm^(2) V^(-)S^(-1) Ratio of conductivity of doped silicon and pure silicon semiconductor is