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Diode is forward biased and the applied ...

Diode is forward biased and the applied voltage is greater than the potential barrier then
(I) resistance of the junction in the forward bias decreases
(II) potential barrier remains same
(III) width barrier remains decreases
(IV) p-type is at higher potential than the n-type.

A

all are true

B

all are false

C

I,II,IV are true I

D

II,III are true

Text Solution

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The correct Answer is:
C
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NARAYNA-SEMICONDUCTOR ELECTRONICS-C.U.Q (INTRINSIC AND EXTRINSIC SEMICONDUCTORS)
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  2. The depletion region is

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  20. In the case of forward biasing of PN-junction, which one of the follow...

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