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A p-n junction has acceptor impurity con...

A p-n junction has acceptor impurity concentration of `10^(17) cm^(-3)` in the p-side and donor impurity concentration of `10^(16)cm^(-3)` in the n-side. What is the contact potential at the junction? (kT=thermal energy , instrinsic carrier concentration `n_(i)=1.6xx10^(10) cm^(-3)`

A

`(kT)/(e)log_(e)(4xx10^(12))`

B

`(kT)/(e)log_(e)(6.3xx10^(22))`

C

`(kT)/(e)log_(e)(2.56xx10^(20))`

D

`(kT)/(e)log_(e)(10^(33))`

Text Solution

Verified by Experts

The correct Answer is:
A
Contact potential `V_(B)=(KT)/(e)log_(e)((N_(A)N_(D))/(n_(1)^(2)))`
Here, `N_(D)=10^(16)cm^(-3),N_(A)=10^(17)cm^(-3)`,
`n_(i)=1.6xx10^(10)cm^(-3)`
`:.V_(B)=(kT)/(e)log_(e)[(10^(17)xx10^(16))/((1.6xx10^(10))^(2))]`
`=(kT)/(e)log_(e)(4xx10^(12))`.
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