The dc common emitter current gain of a n - p - n transistor is 50 . The potential difference applied across the collector and emitter of a transistor used in CE configuration is `V_(CE)` = 2 V . If the collector resistance `R_C = 4KOmega` , the base current and the collection current `(I_B)` and the collector current `(I_C)` are

Options

A. `I_B = 10 muA, I_C = 0.5 mA`
B. `I_B = 0.5 muA, I_C = 10 mA`
C. `I_B = 5 muA, I_C = 1 mA`
D. `I_B = 1 muA, I_C = 0.5 mA`

Answer

A

Explanation

Here , dc current gain , `beta_("dc")=50`
Voltage across collector and emitter, `V_("CE")=2V`
Collector resistance , `R_C=4Omega=4xx10^3Omega`
As `V_("CE")=I_CR_C`
`:.I_C=(V_(CE))/R_C=(2V)/(4xx10^3Omega)=0.5xx10^(-3)A`
`=0.5mA " "("as " 1mA=10^(-3)A)`
and `beta_(dc)=I_C/I_B`
`:.I_B=I_C/(beta_(dc))=(0.5xx10^(-3)A)/50=1xx10^(-5)A`
`=10xx10^(-6)A=10muA " "("as "1muA=10^(-6)A)`