Home
Class 12
PHYSICS
A type semiconductor sample has electro...

A type semiconductor sample has electron and hole concentration of `1.6 xx 10^(19)` the electron and hole mobility in the sample is `1.2 m^(2) v^(-1) s^(-1)` and 0.001 `m^(2)v^(-1) s^(-1)` respectively calculate the value of resistivity of the sample

Text Solution

AI Generated Solution

To calculate the resistivity of the semiconductor sample, we can follow these steps: ### Step 1: Understand the given parameters We have the following values: - Electron concentration, \( n = 1.6 \times 10^{19} \, \text{m}^{-3} \) - Hole concentration, \( p = 1.6 \times 10^{19} \, \text{m}^{-3} \) - Electron mobility, \( \mu_e = 1.2 \, \text{m}^2/\text{V}\cdot\text{s} \) - Hole mobility, \( \mu_h = 0.001 \, \text{m}^2/\text{V}\cdot\text{s} \) ...
Promotional Banner

Topper's Solved these Questions

  • SEMICONDUCTOR ELECTRONICS METERIALS DEVICES AND SIMPLE CIRCUITS

    MODERN PUBLICATION|Exercise CONCEPUAL QUESTIONS|37 Videos
  • SEMICONDUCTOR ELECTRONICS METERIALS DEVICES AND SIMPLE CIRCUITS

    MODERN PUBLICATION|Exercise TOUGH & TRICKY PROBLEMS|10 Videos
  • SEMICONDUCTOR ELECTRONICS METERIALS DEVICES AND SIMPLE CIRCUITS

    MODERN PUBLICATION|Exercise CHAPTER PRACTICE TEST FOR BOARD EXAMINATION|12 Videos
  • RAY OPTICS AND OPTICAL INSTRUMENTS

    MODERN PUBLICATION|Exercise CHAPTER PRACTICE TEST|14 Videos
  • WAVE OPTICAL

    MODERN PUBLICATION|Exercise CHAPTER PRACTICE TEST|7 Videos

Similar Questions

Explore conceptually related problems

What is the conductivity of a semiconductor sample having electron concentration of 5 xx 10^(18) m^(-3) hole concentration of 5 xx 10^(19) m^(-3) , electron mobility of 2.0 m^(2) V^(-1) s^(-1) and hole mobility of 0.01 m^(2) V^(-1) s^(-1)? (Take charge of electron as 1.6 xx 10^(-19)C)

Mobilities of electrons and holes in a sample of a semiconductor is 25000 cm^(2) V^(-1) s^(-1) and 200 cm^(2) Vs respectively if the electron and hole concentration are 9 xx10^(13) per cm^(3) and 4xx10^(12) per cm^(3) respectively calculate the conductivity of the sample

An intrinsic semiconductor has a resistivity of 0.50 Omega m at room temperature. Find the intrinsic carrier concentration if the mobilities of electrons and holes are 0.39 m^2 V^(-1) s^(-1) and 0.11 m^2 V^(-1) s^(-1) respectively

A semiconductor has an electron concentration of 8xx10^(13) per cm^(3) and a hole concentration of 5xx10^(12) per cm^(3) . The electron mobilityis 25,000 cm^(2)V^(-1)sec^(-1) and the hole mobility is 100cm^(2)V^(-1)sec^(-1) and the hole mobility is 100cm^(2)V^(-1)sec^(-1) (i) The semiconductor is n -type (ii) the semiconductor is p -type (iii) the conductivity is 320m mho cm^(-1) (iv) the conductivity is 80m mho cm^(-1)

If resistivity of pure silicon is 3000 Omega m and the electron and hole mobilities are 0.12m^(2)v^(-1)s^(-1) and 0.045 m^(2)v^(-1)s^(-1) respectively, determine. The resistivity of a specimen of the material when 10^(19) atoms of phosphorous are added per m^(3) Given e=1.6 xx10^(-19) c, rho =3000Omega, u_(e)=0.12m^(2)v^(-1)s^(-1), u_(h)=0.045m^(2)v^(-1)s^(-1)

Find the current produced at room temperature in a pure germanium plate of area 2 xx 10^(-4) m^(2) and of thickness 1.2 xx 10^(-3) m when a potential of 5 V is applied across the faces. Concentration of carries in germanium at room temperature is 1.6 xx 10^(6) per cubic metre. The mobilities of electrons and holes are 0.4 m^(2) V^(-1) s^(-1) and 0.2 m^(2) V^(-1) s^(-1) respectively. The heat energy generated in the plate in 100 second is.

If resistivity of pure silicon is 3000Omegam , and the electron and hole mobilities are 0.12 m^(2)V^(-1)s^(-1) and 0.045m^(2)V^(-1)s^(-1) respectively, determine the resistivity of a specimen of the material when 10^(19) atoms of phosphorous are added per m^(3) are also added. Given charge on electron =1.6xx10^(-19)C .

MODERN PUBLICATION-SEMICONDUCTOR ELECTRONICS METERIALS DEVICES AND SIMPLE CIRCUITS -PRACTICE PROBLEMS
  1. The separation between conduction band of electromagnetic radiation ...

    Text Solution

    |

  2. The fobbidden gap in an ntype semiconductor is 4 me v so that the ele...

    Text Solution

    |

  3. A type semiconductor sample has electron and hole concentration of 1...

    Text Solution

    |

  4. The value of forward current in ap-n junction at 0.1 V is 1.04 xx10^(-...

    Text Solution

    |

  5. The values of v and I for silicon diode is given as follows Using...

    Text Solution

    |

  6. Voltage drop across a p-n junction in forward bias is 0.5 V a battery ...

    Text Solution

    |

  7. A p-n junction diode in forward bias is connected to a battery of 4 V...

    Text Solution

    |

  8. Two diodes with internal resistance of 20 omega each are used in a ful...

    Text Solution

    |

  9. The rms value of input voltage in a full wave rectifier is 12 V determ...

    Text Solution

    |

  10. In a Zener regulated power supply a Zener diode with V(Z) = 6.0 V is u...

    Text Solution

    |

  11. A 10V of zener diode is connected in series to a resistance across a ...

    Text Solution

    |

  12. From the output characteristics of common emitter circuit shown in Fig...

    Text Solution

    |

  13. In a common emitter transistor the potential drop across the collect...

    Text Solution

    |

  14. In a common base transistor the value of load resistance in output a...

    Text Solution

    |

  15. In a semiconductor transistor there is change in collector current of ...

    Text Solution

    |

  16. In common emitter transistor as shown in Fig., the V(BB) supply can be...

    Text Solution

    |

  17. For a CE transistor amplifier the audio signal voltage across the col...

    Text Solution

    |

  18. Which gate is represented by the given truth table

    Text Solution

    |

  19. You are given a circuit below write its truth table hence identify t...

    Text Solution

    |

  20. Identify the logic gates marked P and Q in the circuit Fig. Write the ...

    Text Solution

    |