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In an n type silicon which of the follow...

In an n type silicon which of the following statement is true
(a) electrons are majortiy carriers and trivalent atoms are the dopants
(b) electrons are minority carriers and pentavalent atoms are the dopants
(c ) hoes are minority carriers and pentavalent atoms are the dopants
(d) holes are majority carriers and trivalen atoms are the dopant

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To solve the question regarding n-type silicon and determine which statement is true, we need to analyze the properties of n-type semiconductors. ### Step-by-Step Solution: 1. **Understanding n-type Silicon**: - n-type silicon is formed when silicon (which has four valence electrons) is doped with a pentavalent impurity (which has five valence electrons). 2. **Identifying the Dopants**: ...
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In an n- type silicon, which of the following statements is true ? (a) Electrons are majority carries and trivalent atoms are the dopants. (b) Electrons are majority carries and pentavalent atoms are the dopants. (c ) Holes are minority carries and paentavalent atoms are the dopants. (d) Holes are minority carries and trivalent atoms are the dopants.

Which of the following is affected by stable configuration of an atom (a) Electronegativity (b) Ionisation potential (c) Electron affinity Correct answer is:-

Read the following text and answer the following questions on the basis of the same: Light Emitting Diode: It is a heavily doped p-n junction which under forward bias emits spontaneous radiation. The diode is encapsulated with a transparent cover so that emitted light can come out. When the diode is forward biased, electrons are sent from n to p (where they are minority carriers) and holes are sent from p to n(where they are minority carriers). At the junction boundary, the concentration of minority carriers increases as compared to the equilibrium concentration (i.e., when there is no bias). Thus at the junction boundary on either side of the junction, excess minority carriers are there which recombine with majority carriers near the junction. On recombination, the energy is released in the form of photons. Photons with energy equal to or slightly less than the band gap are emitted. When the forward current of the diode is small, the intensity of light emitted is small. As the forward current increases, intensity of light increases and reaches a maximum. Further increase in the forward current results in decrease of light intensity. LED's are biased such that the light emitting efficiency is maximum. The V-I characteristics of a LED is similar to that of a Si junction diode. But, the threshold voltages are much higher and slightly different for each colour. The reverse breakdown voltages of LED's are very low, typically around 5 V. So care should be taken that high reverse voltages do not appear across them. LED's that can emit red, yellow, orange, green and blue light are commercially available. During recombination at the junction, emitted photons have:

Read the following text and answer the following questions on the basis of the same: Light Emitting Diode: It is a heavily doped p-n junction which under forward bias emits spontaneous radiation. The diode is encapsulated with a transparent cover so that emitted light can come out. When the diode is forward biased, electrons are sent from n to p (where they are minority carriers) and holes are sent from p to n(where they are minority carriers). At the junction boundary, the concentration of minority carriers increases as compared to the equilibrium concentration (i.e., when there is no bias). Thus at the junction boundary on either side of the junction, excess minority carriers are there which recombine with majority carriers near the junction. On recombination, the energy is released in the form of photons. Photons with energy equal to or slightly less than the band gap are emitted. When the forward current of the diode is small, the intensity of light emitted is small. As the forward current increases, intensity of light increases and reaches a maximum. Further increase in the forward current results in decrease of light intensity. LED's are biased such that the light emitting efficiency is maximum. The V-I characteristics of a LED is similar to that of a Si junction diode. But, the threshold voltages are much higher and slightly different for each colour. The reverse breakdown voltages of LED's are very low, typically around 5 V. So care should be taken that high reverse voltages do not appear across them. LED's that can emit red, yellow, orange, green and blue light are commercially available. Threshold voltage of LED is:

Read the following text and answer the following questions on the basis of the same: Light Emitting Diode: It is a heavily doped p-n junction which under forward bias emits spontaneous radiation. The diode is encapsulated with a transparent cover so that emitted light can come out. When the diode is forward biased, electrons are sent from n to p (where they are minority carriers) and holes are sent from p to n(where they are minority carriers). At the junction boundary, the concentration of minority carriers increases as compared to the equilibrium concentration (i.e., when there is no bias). Thus at the junction boundary on either side of the junction, excess minority carriers are there which recombine with majority carriers near the junction. On recombination, the energy is released in the form of photons. Photons with energy equal to or slightly less than the band gap are emitted. When the forward current of the diode is small, the intensity of light emitted is small. As the forward current increases, intensity of light increases and reaches a maximum. Further increase in the forward current results in decrease of light intensity. LED's are biased such that the light emitting efficiency is maximum. The V-I characteristics of a LED is similar to that of a Si junction diode. But, the threshold voltages are much higher and slightly different for each colour. The reverse breakdown voltages of LED's are very low, typically around 5 V. So care should be taken that high reverse voltages do not appear across them. LED's that can emit red, yellow, orange, green and blue light are commercially available. LED emits light:

Read the following text and answer the following questions on the basis of the same: Light Emitting Diode: It is a heavily doped p-n junction which under forward bias emits spontaneous radiation. The diode is encapsulated with a transparent cover so that emitted light can come out. When the diode is forward biased, electrons are sent from n to p (where they are minority carriers) and holes are sent from p to n(where they are minority carriers). At the junction boundary, the concentration of minority carriers increases as compared to the equilibrium concentration (i.e., when there is no bias). Thus at the junction boundary on either side of the junction, excess minority carriers are there which recombine with majority carriers near the junction. On recombination, the energy is released in the form of photons. Photons with energy equal to or slightly less than the band gap are emitted. When the forward current of the diode is small, the intensity of light emitted is small. As the forward current increases, intensity of light increases and reaches a maximum. Further increase in the forward current results in decrease of light intensity. LED's are biased such that the light emitting efficiency is maximum. The V-I characteristics of a LED is similar to that of a Si junction diode. But, the threshold voltages are much higher and slightly different for each colour. The reverse breakdown voltages of LED's are very low, typically around 5 V. So care should be taken that high reverse voltages do not appear across them. LED's that can emit red, yellow, orange, green and blue light are commercially available. The reverse breakdown voltages of LED's are:

Read the following text and answer the following questions on the basis of the same: Light Emitting Diode: It is a heavily doped p-n junction which under forward bias emits spontaneous radiation. The diode is encapsulated with a transparent cover so that emitted light can come out. When the diode is forward biased, electrons are sent from n to p (where they are minority carriers) and holes are sent from p to n(where they are minority carriers). At the junction boundary, the concentration of minority carriers increases as compared to the equilibrium concentration (i.e., when there is no bias). Thus at the junction boundary on either side of the junction, excess minority carriers are there which recombine with majority carriers near the junction. On recombination, the energy is released in the form of photons. Photons with energy equal to or slightly less than the band gap are emitted. When the forward current of the diode is small, the intensity of light emitted is small. As the forward current increases, intensity of light increases and reaches a maximum. Further increase in the forward current results in decrease of light intensity. LED's are biased such that the light emitting efficiency is maximum. The V-I characteristics of a LED is similar to that of a Si junction diode. But, the threshold voltages are much higher and slightly different for each colour. The reverse breakdown voltages of LED's are very low, typically around 5 V. So care should be taken that high reverse voltages do not appear across them. LED's that can emit red, yellow, orange, green and blue light are commercially available. LED is a :

MODERN PUBLICATION-SEMICONDUCTOR ELECTRONICS METERIALS DEVICES AND SIMPLE CIRCUITS -NCERT FILE SOLVED (TEXT BOOK EXERCISES )
  1. In an n type silicon which of the following statement is true (a) ...

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  2. Which of the statements given in above example is true for p - type se...

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  3. Carbon silicon and germanium have four valence electrons each these ...

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  4. In an unblased p-n junction, holes diffuse from the p - region to n- r...

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  5. When a forward bias is applied to a p -n junction. It

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  6. For transistor action which of the following statement are correct (...

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  7. For transistor amplifier the voltage gain (a) remains constant for ...

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  8. In half - wave rectification, what is the output frequency, if the ...

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  9. For a CE -transistor amplifier the audio signal voltage across the col...

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  10. Two amplifiers are connected one after the other in series (cascaded)....

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  11. A p-n photodiode is fabricated from a semiconductor with band gap of...

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  12. The number of silicon atoms per m^(3) is 5xx10^(28). This is doped sim...

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  13. In an intrinsic semiconductor, the energy gap E(g) of an intrinsic sem...

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  14. In a p-n junction diode, the currect I can expressed as I=I(0) exp((eV...

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  15. You are given two circuits as given below show that circuit (a) acts ...

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  16. Write the truth table for a NAND gae connected as given in the follow...

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  17. Why are elemental dopants for Silicon or Germanium usually chosen fro...

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  18. Sn, C, Si and Ge are all group XIV elements . Yet , Sn is a conductor ...

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  19. Can the potential barrier across a p-n junction be measured by simply ...

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  20. Draw the output wave form across the resistor

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