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In an n type silicon which of the follow...

In an n type silicon which of the following statement is true
(a) electrons are majortiy carriers and trivalent atoms are the dopants
(b) electrons are minority carriers and pentavalent atoms are the dopants
(c ) hoes are minority carriers and pentavalent atoms are the dopants
(d) holes are majority carriers and trivalen atoms are the dopant

Text Solution

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To solve the question regarding n-type silicon and determine which statement is true, we need to analyze the properties of n-type semiconductors. ### Step-by-Step Solution: 1. **Understanding n-type Silicon**: - n-type silicon is formed when silicon (which has four valence electrons) is doped with a pentavalent impurity (which has five valence electrons). 2. **Identifying the Dopants**: ...
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In an n - type silicon, which of the following statement is true : (a) Electrons are majority carriers and trivalent atoms are the dopants. (b) Electrons are minority carriers and pentavalent atoms are the dopants. (c) Holes are minority carriers and pentavalent atoms are the dopants. (d) Holes are majority carriers and trivalent atoms are the dopants.

In an n- type silicon, which of the following statements is true ? (a) Electrons are majority carries and trivalent atoms are the dopants. (b) Electrons are majority carries and pentavalent atoms are the dopants. (c ) Holes are minority carries and paentavalent atoms are the dopants. (d) Holes are minority carries and trivalent atoms are the dopants.

Knowledge Check

  • Which of the following is affected by stable configuration of an atom (a) Electronegativity (b) Ionisation potential (c) Electron affinity Correct answer is:-

    A
    Only electronegativity
    B
    Only ionisation potential
    C
    Electron affinity and ionisation potential
    D
    All of the above

  • Read the following text and answer the following questions on the basis of the same: Light Emitting Diode: It is a heavily doped p-n junction which under forward bias emits spontaneous radiation. The diode is encapsulated with a transparent cover so that emitted light can come out. When the diode is forward biased, electrons are sent from n to p (where they are minority carriers) and holes are sent from p to n(where they are minority carriers). At the junction boundary, the concentration of minority carriers increases as compared to the equilibrium concentration (i.e., when there is no bias). Thus at the junction boundary on either side of the junction, excess minority carriers are there which recombine with majority carriers near the junction. On recombination, the energy is released in the form of photons. Photons with energy equal to or slightly less than the band gap are emitted. When the forward current of the diode is small, the intensity of light emitted is small. As the forward current increases, intensity of light increases and reaches a maximum. Further increase in the forward current results in decrease of light intensity. LED's are biased such that the light emitting efficiency is maximum. The V-I characteristics of a LED is similar to that of a Si junction diode. But, the threshold voltages are much higher and slightly different for each colour. The reverse breakdown voltages of LED's are very low, typically around 5 V. So care should be taken that high reverse voltages do not appear across them. LED's that can emit red, yellow, orange, green and blue light are commercially available. During recombination at the junction, emitted photons have:

    A
    energy greater than the band gap.
    B
    energy equal to or slightly less than the band gap.
    C
    energy which has no relation with the band gap.
    D
    very low energy compared to band gap.

  • Read the following text and answer the following questions on the basis of the same: Light Emitting Diode: It is a heavily doped p-n junction which under forward bias emits spontaneous radiation. The diode is encapsulated with a transparent cover so that emitted light can come out. When the diode is forward biased, electrons are sent from n to p (where they are minority carriers) and holes are sent from p to n(where they are minority carriers). At the junction boundary, the concentration of minority carriers increases as compared to the equilibrium concentration (i.e., when there is no bias). Thus at the junction boundary on either side of the junction, excess minority carriers are there which recombine with majority carriers near the junction. On recombination, the energy is released in the form of photons. Photons with energy equal to or slightly less than the band gap are emitted. When the forward current of the diode is small, the intensity of light emitted is small. As the forward current increases, intensity of light increases and reaches a maximum. Further increase in the forward current results in decrease of light intensity. LED's are biased such that the light emitting efficiency is maximum. The V-I characteristics of a LED is similar to that of a Si junction diode. But, the threshold voltages are much higher and slightly different for each colour. The reverse breakdown voltages of LED's are very low, typically around 5 V. So care should be taken that high reverse voltages do not appear across them. LED's that can emit red, yellow, orange, green and blue light are commercially available. Threshold voltage of LED is:

    A
    lower compared to other p-n junction diodes and slightly different for each colour.
    B
    higher compared to other p-n junction diodes and slightly different for each colour.
    C
    higher compared to other p-n junction diodes and same for all colours.
    D
    lower compared to other p-n junction diodes and same for all colours.

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    In a n-type semiconductor each pentavalent dopant atom contributes only one electron.

    Read the following text and answer the following questions on the basis of the same: Light Emitting Diode: It is a heavily doped p-n junction which under forward bias emits spontaneous radiation. The diode is encapsulated with a transparent cover so that emitted light can come out. When the diode is forward biased, electrons are sent from n to p (where they are minority carriers) and holes are sent from p to n(where they are minority carriers). At the junction boundary, the concentration of minority carriers increases as compared to the equilibrium concentration (i.e., when there is no bias). Thus at the junction boundary on either side of the junction, excess minority carriers are there which recombine with majority carriers near the junction. On recombination, the energy is released in the form of photons. Photons with energy equal to or slightly less than the band gap are emitted. When the forward current of the diode is small, the intensity of light emitted is small. As the forward current increases, intensity of light increases and reaches a maximum. Further increase in the forward current results in decrease of light intensity. LED's are biased such that the light emitting efficiency is maximum. The V-I characteristics of a LED is similar to that of a Si junction diode. But, the threshold voltages are much higher and slightly different for each colour. The reverse breakdown voltages of LED's are very low, typically around 5 V. So care should be taken that high reverse voltages do not appear across them. LED's that can emit red, yellow, orange, green and blue light are commercially available. LED emits light:

    Read the following text and answer the following questions on the basis of the same: Light Emitting Diode: It is a heavily doped p-n junction which under forward bias emits spontaneous radiation. The diode is encapsulated with a transparent cover so that emitted light can come out. When the diode is forward biased, electrons are sent from n to p (where they are minority carriers) and holes are sent from p to n(where they are minority carriers). At the junction boundary, the concentration of minority carriers increases as compared to the equilibrium concentration (i.e., when there is no bias). Thus at the junction boundary on either side of the junction, excess minority carriers are there which recombine with majority carriers near the junction. On recombination, the energy is released in the form of photons. Photons with energy equal to or slightly less than the band gap are emitted. When the forward current of the diode is small, the intensity of light emitted is small. As the forward current increases, intensity of light increases and reaches a maximum. Further increase in the forward current results in decrease of light intensity. LED's are biased such that the light emitting efficiency is maximum. The V-I characteristics of a LED is similar to that of a Si junction diode. But, the threshold voltages are much higher and slightly different for each colour. The reverse breakdown voltages of LED's are very low, typically around 5 V. So care should be taken that high reverse voltages do not appear across them. LED's that can emit red, yellow, orange, green and blue light are commercially available. The reverse breakdown voltages of LED's are:

    Read the following text and answer the following questions on the basis of the same: Light Emitting Diode: It is a heavily doped p-n junction which under forward bias emits spontaneous radiation. The diode is encapsulated with a transparent cover so that emitted light can come out. When the diode is forward biased, electrons are sent from n to p (where they are minority carriers) and holes are sent from p to n(where they are minority carriers). At the junction boundary, the concentration of minority carriers increases as compared to the equilibrium concentration (i.e., when there is no bias). Thus at the junction boundary on either side of the junction, excess minority carriers are there which recombine with majority carriers near the junction. On recombination, the energy is released in the form of photons. Photons with energy equal to or slightly less than the band gap are emitted. When the forward current of the diode is small, the intensity of light emitted is small. As the forward current increases, intensity of light increases and reaches a maximum. Further increase in the forward current results in decrease of light intensity. LED's are biased such that the light emitting efficiency is maximum. The V-I characteristics of a LED is similar to that of a Si junction diode. But, the threshold voltages are much higher and slightly different for each colour. The reverse breakdown voltages of LED's are very low, typically around 5 V. So care should be taken that high reverse voltages do not appear across them. LED's that can emit red, yellow, orange, green and blue light are commercially available. LED is a :

    Which of these are correct? I in forward biasing holes from p-side crosses junction and reach n-side III In n-side holes are minority carriers IV In p-side electrons are minority carriers

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