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Impurity levels in a doped semiconductor...

Impurity levels in a doped semiconductor is found to be 35 millielectron volts below the conduction at temperature `T_(1)` when thermal collisions take place approximate amount of energy and reach the conduction band due to collisions then estimate the temperature of the sample

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To solve the problem of estimating the temperature of a doped semiconductor based on the impurity level, we can follow these steps: ### Step 1: Understand the Problem We know that the impurity level in the doped semiconductor is 35 millielectron volts (meV) below the conduction band. This means that the energy needed for an electron to move from the impurity level to the conduction band is 35 meV. ### Step 2: Convert Energy to Electron Volts Convert the given energy from millielectron volts to electron volts: \[ ...
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