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Carbon silicon and germanium have four ...

Carbon silicon and germanium have four valence electrons each these are characterised by valence and conduction bands separated by energy band gap respectively equal to which of the following statement is true
(a) `(E_(g))_(Si)lt(E_(g))_(Ge)lt(E_(g))_(c )`
(b)`(E_(g))_(c )lt(E_(g))_(Gelt(E_(g))_(Si)`
(c )`(E_(g))_(c )gt(E_(g))_(Si)gt(E_(g))_(Ge)`
`(d)(E_(g))_(c )=(E_(g))_(si)=(E_(g))_(Ge)`

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the energy band gap of carbon is maximum as it is an isulator follwed by silicon semiconductor and then germanium also semiconductor The correct option is
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MODERN PUBLICATION-SEMICONDUCTOR ELECTRONICS METERIALS DEVICES AND SIMPLE CIRCUITS -NCERT FILE SOLVED (TEXT BOOK EXERCISES )
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  2. Which of the statements given in above example is true for p - type se...

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  3. Carbon silicon and germanium have four valence electrons each these ...

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  4. In an unblased p-n junction, holes diffuse from the p - region to n- r...

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  5. When a forward bias is applied to a p -n junction. It

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  8. In half - wave rectification, what is the output frequency, if the ...

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  11. A p-n photodiode is fabricated from a semiconductor with band gap of...

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  12. The number of silicon atoms per m^(3) is 5xx10^(28). This is doped sim...

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  13. In an intrinsic semiconductor, the energy gap E(g) of an intrinsic sem...

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  14. In a p-n junction diode, the currect I can expressed as I=I(0) exp((eV...

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  15. You are given two circuits as given below show that circuit (a) acts ...

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  16. Write the truth table for a NAND gae connected as given in the follow...

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  17. Why are elemental dopants for Silicon or Germanium usually chosen fro...

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  18. Sn, C, Si and Ge are all group XIV elements . Yet , Sn is a conductor ...

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  19. Can the potential barrier across a p-n junction be measured by simply ...

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  20. Draw the output wave form across the resistor

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