In a `p-n` junction diode, the currect `I` can expressed as `I=I_(0) exp((eV)/(2k_(B)T)-1)` where `I_(0)` is called the reverse saturation current, `V` is the voltage across the diode and is positive for forward bias and negative for reverse bias, and `I` is the current through the diode, `K_(B)` is the Boltzmann constant `(8.6 xx 10^(-5) eV//K)` and `T` is the absolute temperature. If for a given diode `I_(o) = 5 xx 10^(-12) A` and `T = 300 K`, then
(a) What will be the forward current at a formward voltage of `0.6V` ?
(b) What will be the increase in the current if the voltage across the diode is increased to `0.7 V` ?
( c) What is the dynamic resistance ?
(d) What will be current if reverse bias voltage changes from `1 V` to `2 V` ?

Explanation

Give that
`I= I_(o) [exp ((eV)/( K_(b) T)) - 1]`
a For `V= 0.6 V`
`(eV)/( K_(b) T) = (0.6 xx 1.6 xx 10^(-19))/( 8.6 xx 10^(-6) xx 1.6 xx 10^(-19) xx 300) = 23. 26`
(b) `v= 0.7 V`
`(eV)/( K_(B) T) = (0.7 xx 1.6 xx 10^(-19))/( 8.6 xx 1 0^(-5) xx 1.6 xx 10^(-19) xx 300)`
exp (27 . 13) =` 6.069 xx 10^(11)`
(c ) Dynamic resistance d `= (Delta V)/( Delta I) = (0.1)/(2.972) = 0.0336`
(d ) if reverse biase voltage is 1 v or 2 v, then in both cases the reverse saturation current flows and that remins constant