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Carbon, silicon and germanium have four ...

Carbon, silicon and germanium have four valence electrons each . These are characterised by valence and conduction bands separated by energy band gap respectively equal to `(E_(g))_(C) , (E_(g))_(Si)` and `(E_(g))_(Ge)` . Which of the following statements is true ?

A

`(E_(g))_(Si) lt (E_(g))_(Ge) lt (E_(g))_(C)`

B

`(E_(g))_(C) lt (E_(g))_(Ge) gt (E_(g))_(Si)`

C

`(E_(g))_(C) gt (E_(g))_(Si) gt (E_(g))_(Ge)`

D

`(E_(g))_(C) = (E_(g))_(Si) = (E_(g))_(Ge)`

Text Solution

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The correct Answer is:
C
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NEW JOYTHI PUBLICATION-SEMICONDUCTOR ELECTRONICS : MATERIALS , DEVICES AND SIMPLE CIRCUITS -SOLUTION TO EXERCISES FROM NCERT TEXT
  1. In an n-type silicon , which of the following statements is true ?

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  2. How do you classify p-type semiconductors ?

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  3. Carbon, silicon and germanium have four valence electrons each . These...

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  4. In an unbiased p-n junction , holes diffuse from the p-region to n- re...

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  5. When a forward bias is applied to a p-n junction , it

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  6. Which of the following statements are incorrect?

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  7. For a transistor amplifier , the voltage gain

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  8. In half-wave rectification , what is the output frequency if the input...

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  9. For a CE- transistor amplifier , the audio signal voltage across the c...

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  10. Two amplifiers are connected one after the other in series (cascaded) ...

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  11. A p-n photodiode is fabricated from a semiconductor with hand gap of 2...

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  12. In an intrinsic semiconductor , the energy gap E(g) is 1.2 eV . Its ho...

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  13. You are given the two circuits as shown in fig. show that circuit (a) ...

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  14. Write the truth table for a NAND gate connected as given in figure bel...

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  15. You are given two circuits as shown in fig. which consist of NAND gate...

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  16. Write the truth table for circuit given in figure below consisting of ...

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  17. Write the truth table for the circuits gives in figure consisting of N...

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