A p-n photodiode is fabricated from a semiconductor with hand gap of 2.8 eV . Can it detect a wavelength of 6000 n m ?

Explanation

`E_(g)= 2.8 e V , lambda = 6000 nm = 6000 xx 10^(-9) `m
`E = h upsilon = h ""(c)/(lambda) = (6.6 xx 10^(-34) xx 3 xx 10^(8))/(6000 xx 10^(-9)) = 3.315 xx 10^(-19) J = (3.315 xx 10^(-19))/(1.6 xx 10^(-19)) = 2.07 eV`
No , Since `h upsilon` is less than `E_(g)`