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When on impurity is doped into an intrin...

When on impurity is doped into an intrinsic semiconductor, the conductivity of the semiconductor

A

increases

B

decreases

C

remains the same

D

becomes zero

Text Solution

Verified by Experts

The correct Answer is:
C

By dopoing, the band gap reduce from 1eV to 0.3 to 0.7 eV & electron can achieve this energy (0.3eV to 0.7eV) at room temperature & reach in C.B (conduction band).
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DISHA PUBLICATION-SEMICONDUCTOR ELECTRONICS : METERIALS, DEVICES AND SIMPLE CIRCUITS-EXERCISE -1: CONCEPT BUILDER (TOPICWISE)
  1. In semiconductor at a room temperature

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  2. An electric field us applied to a semiconductor.Let the number of char...

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  3. When on impurity is doped into an intrinsic semiconductor, the conduct...

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  4. A solid which is not transperent to visible light and whose conductivi...

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  5. The electrical conductivity of pure germanium can be increased by

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  6. The mobility of free electrons is greater then that of free holes beca...

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  7. If the two ends of a p-n junction are joined by a wire ,

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  8. The diffusion current in a p-n junction is

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  9. Lets npand ne be the number of holes and conduction electrons in an ex...

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  10. In the half wave rectifier circuit operating from 50 Hz mains frequenc...

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  11. In a half wave rectifier, the r.m.s value of the A.C. component of the...

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  12. The average value of output direct current in a full wave rectifier is

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  13. Carbon, silicon and germanium atoms have four valence electrons each. ...

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  14. If an ideal junction diode is connected as shown, then the value of th...

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  15. Which is the correct diagram of a half-wave rectifier

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  16. In a p-type semiconductor the acceptor level is situated 60 m eV above...

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  17. For bidden gap for insulators is

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  18. Copper, a monovalent, has molar mass 63.54 g/mol and density 8.96 g//c...

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  19. An LED is constructed from a p-n junction based on a certain Ga-As-P s...

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  20. In a photodiode,the conductivity increases when the material is expose...

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