Home
Class 12
PHYSICS
In a p-type semiconductor the acceptor l...

In a p-type semiconductor the acceptor level is situated 60 m eV above the valence band. The maximum wavelength of light required to produce a hole will be [use hc `=12400 eV Å]`.

A

`0.207 xx 10^(-5) m`

B

`2.07 xx 10^(-5)m`

C

`20.7 xx 10^(-5) m`

D

`2075 xx 10^(-5) m`

Text Solution

Verified by Experts

The correct Answer is:
B
`lambda = (hc)/E = (6.62 xx 10^(-34) xx3xx 10^8)/((60xx 10^(-3) xx 1.6xx 10^(-19))) = 2.07 xx 10^(-5)m`
Promotional Banner

Topper's Solved these Questions

  • SEMICONDUCTOR ELECTRONICS : METERIALS, DEVICES AND SIMPLE CIRCUITS

    DISHA PUBLICATION|Exercise EXERCISE -2: CONCEPT APPLICATOR|25 Videos

  • SEMICONDUCTOR ELECTRONICS : METERIALS, DEVICES AND SIMPLE CIRCUITS

    DISHA PUBLICATION|Exercise EXERCISE -2: CONCEPT APPLICATOR|25 Videos

  • RAY OPTICS AND OPTICAL INSTRUMENTS

    DISHA PUBLICATION|Exercise Exercise -2 : Concept Applicator|26 Videos

  • SYSTEM OF PARTICLES & ROTATIONAL MOTION

    DISHA PUBLICATION|Exercise EXERCISE-2 : CONCEPT APPLICATOR|28 Videos

Similar Questions

Explore conceptually related problems

A p-type semoconductor has acceptor levels 57meV above the valence band. Find the maximum wavelength of light which can create a hole.

A p type semiconductor has acceptor level 30 mev above the valence band what will be the maximum wavelength of light that can create a hole

A P -type semiconductor has acceptor levels 57 meV above the valence band. The maximum wavelength of light required to create a hole is (Planck's constant h=6.6xx10^(-34)J-s )

An n-type semiconductor has donor levels at 500 meV above the valence band, the frequnecy of light required to create a hole is nearly

A p-type semiconductor has acceptor energy level 53meV above the valence band. Find the maximum wavelength of light that can creat a hole. Use h=6.63xx10^(-34)Js, c=3xx10^(8)ms^(-1) .

A semiconducting material has a band gap if 1 eV.Acceptor impurities are doped into it which create acceptor level 1meV above the valence band.Assume that the transition form one energy level to the otheris almost forbidden if kT is less than 1//50 of the energy gap.Also,if kT is more than twice the gap, the upper levels have maximum polution.The temperature of the semiconductor is increaased form 0K.The concentration of the holes increase with temperature and after a certain temperature it becomes approximately constant.As the tamperature is further increased the hole concentration again starts increasing at certain temperature, Find the order of the temperature range in which the hoel concentration remains approximately constant.

In an n-type semiconductor, the fermi level lies 0.3 eV below the conduction band at 300 K. If the temperature is increased to 330K, where does the new position of the Fermi level lie?

A photodetector is made from a compound semiconductor with band gap 0.73eV. The maximum wavelength it can detect is

DISHA PUBLICATION-SEMICONDUCTOR ELECTRONICS : METERIALS, DEVICES AND SIMPLE CIRCUITS-EXERCISE -1: CONCEPT BUILDER (TOPICWISE)
  1. If an ideal junction diode is connected as shown, then the value of th...

    Text Solution

    |

  2. Which is the correct diagram of a half-wave rectifier

    Text Solution

    |

  3. In a p-type semiconductor the acceptor level is situated 60 m eV above...

    Text Solution

    |

  4. For bidden gap for insulators is

    Text Solution

    |

  5. Copper, a monovalent, has molar mass 63.54 g/mol and density 8.96 g//c...

    Text Solution

    |

  6. An LED is constructed from a p-n junction based on a certain Ga-As-P s...

    Text Solution

    |

  7. In a photodiode,the conductivity increases when the material is expose...

    Text Solution

    |

  8. The energy gap of silicon is 1.14 eV. Find the maximum wavelenth at wh...

    Text Solution

    |

  9. On doping germanium with donor atoms of density 10^(17) cm^(-3), find ...

    Text Solution

    |

  10. The ratio of electron and hole currents in a semiconductor is 7/4 and ...

    Text Solution

    |

  11. What is the conductivity of a semiconductor (in Omega^(-1) m^(-1)) if ...

    Text Solution

    |

  12. If the ratio of the concentration of electron to that of holes in a se...

    Text Solution

    |

  13. In germanium the energy gap is about 0.75 eV. The wavelength of light ...

    Text Solution

    |

  14. A potential barrier of 0.3 V exists across a p-n junction. An electron...

    Text Solution

    |

  15. To use a transistor as an amplifier

    Text Solution

    |

  16. Current gain of a transistor in common base mode is 0.95. Its value in...

    Text Solution

    |

  17. A transistor has three impurity regions , emitter , base and collector...

    Text Solution

    |

  18. In a common-base amplifier, the phase difference between the input sig...

    Text Solution

    |

  19. The current gain beta may be defined as

    Text Solution

    |

  20. When n-p-n transistor is used as an amplifier

    Text Solution

    |