The current-voltage characteristic of an ideal p-n junction diode is given by
`i=i_0(e^eV//kT-1)`
where the drift current `i_0`equals `10(mu)A`.Take the temperature T to be 300K.(a)Find the voltage `v_0`for which `e^(eV//kT)=100`.One can neglect the term 1 for vlatages greater than this value (b)Find an expression of the dynamic resistance of the diode as a function of V for `VgtV_0`.(c)Find the voltage for which the dynamic resistance is `2.0 (Omega)`

Options

A. 0.12 V
B. 0.5V
C. 0.25V
D. 1.5V

Answer

A

Explanation

Given `e^(ev//KT) = 100`
`or (ev)/(KT) = In 100`
`V = (kT In 100)/e`
`=(1.38 xx 10(-23) xx 300 xx In 100)/(1.6xx10^19)= 0.12V`