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4 In an unbiased p-n junction, holes dif...

4 In an unbiased p-n junction, holes diffuse from the p-region to n-region because

A

free electrons in the n-region attract them.

B

they move across the junction by the potential difference.

C

hole concentration in p-region is more as compared to n-region.

D

All the above.

Text Solution

Verified by Experts

The correct Answer is:
c
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Knowledge Check

  • When p-n junction diode is forward biased ………

    A
    the depletion region is reduced and barrier height is increased.
    B
    the deplection region is widened and barrier height is reduced.
    C
    both the depletion region and barrier height reduced.
    D
    both the depletion region and barrier height increased.

  • The breakdown in a reverse biased p-n junction diode is more likely to occur due to

    A
    large velocity of the minority charge carriers if the doping concentration is small.
    B
    large velocity of the minority charge carriers if the doping concentration is large.
    C
    strong electric field in a depletion region if the doping concentration is small.
    D
    strong electric field in the depletion region if the doping concentration is large.

  • The depletion layer in the p-n junction region is caused by ……

    A
    drift of holes.
    B
    diffusion of charge carriers.
    C
    migration of impurity ions.
    D
    drift electrons.

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