Forward biasing and Reverse biasing

Explain (i) forward biasing (ii) reverse biasing of a P-N junction diode. With the help of a circuit diagram, explain the use of this device as a half wave rectifier.

Using the necessary circuit diagram, show how the V-I characteristics of a p-n junction are obtained in (i) forward biasing (ii) Reverse biasing. How are these characteristics made use of in rectification?

(a) state briefly the processes involved in the formation of p-n how the depletion region is formed (b) using the necessary ciruit diagrams show p-n jucntion are obtained in (i) forward biasing (ii) reverse biasing how these characteiistics are made use of in recitifcation

What accounts for the flow of charge carriers in forward and reverse biasing of sillicon P-N diode-

What is the deffect on current when a p-n diode is (i) forward biased (ii) reverse biased

Assertion:The dominant mechanism for motion of charge carriers in forward and reverse biased silicon P-N junction are drift in both forward and reverse biase. Reason: In reverse biasing, no current flow through the junction.

Explain with the help of a diagram, how depletion region and potential barrier are formed in a junction diode. If a small voltage is applied to a p-n junction diode how will the barrier potential be affected when it is (i) forward biased and (ii) reverse biased?