Home
Class 12
PHYSICS
What is forward bias and reverse bias ?...

What is forward bias and reverse bias ?

Text Solution

Verified by Experts

When the positive terminal of the battery is connected to p side of junction and negative terminal connected to N side of junction such a connection is known as forward as forward bias as shown in figure (a).

The applied voltage mostly drops across the depletion region and the voltage drop across the p-side and n-side of the junction is negligible.
This is because the resistance of the depletion region is very high due to no charges presents in this region.
The direction of the applied voltage (V) is opposite to the built-in potential `(V_(0))` as a result the depletion layer width decreases and the barrier height is reduced due to V > > `V_(0)`. This is shown in figure (c ).

The effective barrier height under forward bias is `V_(0)-V`.
If the external battery is not connected to the p-n junction then the effective depletion barrier.s height `V_(0)` is shown as 1 in figure (c ).
When the applied voltage is low, the height of effective barrier potential shows by 2 and the applied voltage is large the height of effective barrier potential shows by 3.
If we increase the applied voltage, the barrier height will be reduced and more number of carriers will have the required energy, so the current increases.
Due to the applied voltage, electrons from n-side cross the depletion region and reach p-side where they are minority carriers. Similarly, holes from p-side cross the junction and reach the n-side where they are minority carriers.
The process under forward bias is known as minority carrier injection.
At the junction boundary, on each side, the minority carrier concentration increases compared to the locations far from the junction.
Due to the concentration gradient, the injected electrons on p-side diffuse from the junction edge of p-side to the other end of p-side, similarly the injected holes on n-side diffuse from the junction edge of n-side to the other end of n-side.
This motion of charged carriers on either side give rise to current.
The total diode forward current is sum of hole diffusion current and conventional current due to electron diffusion. The magnitude of this current is usually in mA.
Forward bias junction has low resistance and external battery voltage is 1.5 V.
Doubtnut Promotions Banner Mobile Dark
|

Topper's Solved these Questions

  • SEMICONDUCTOR ELECTRONICS : MATERIALS, DEVICES AND SIMPLE CIRCUITS

    KUMAR PRAKASHAN|Exercise Section-B : Numericals (Numerical From Textual illustrations)|16 Videos
  • SEMICONDUCTOR ELECTRONICS : MATERIALS, DEVICES AND SIMPLE CIRCUITS

    KUMAR PRAKASHAN|Exercise Section-B : Numericals (Numerical From Textual Exercise)|15 Videos
  • SEMICONDUCTOR ELECTRONICS : MATERIALS, DEVICES AND SIMPLE CIRCUITS

    KUMAR PRAKASHAN|Exercise Section-D : Multiple Choice Questions (MCQs) (MCQs asked in Competitive Exams)|129 Videos
  • SAMPLE QUESTION PAPER

    KUMAR PRAKASHAN|Exercise PART-B SECTION-C|5 Videos
  • WAVE OPTICS

    KUMAR PRAKASHAN|Exercise SECTION-D (MULTIPLCE CHOICE QUESTIONS (MCQS)) (MCQS FROM DARPAN BASED ON TEXTBOOK)|239 Videos

Similar Questions

Explore conceptually related problems

How does the height of potential barrier change in forward bias and reverse bias?

Write the formula and definition of dynamic resistance and also state their approximate values for forward bias and reverse bias.

Knowledge Check

  • The ratio of resistance of forward bias and reverse bias in p-n connection is …….

    A
    `10^(2):1`
    B
    `10^(-2):1`
    C
    `1:10^(-4)`
    D
    `1:10^(4)`
  • When we use zener diode as a voltage regulator, its connection ……. (i) forward bias (ii) reverse bias (iii) should parallel with load (iv) should series with load

    A
    (i) and (ii) are true
    B
    (ii) and (iii) are true
    C
    only (i) is true
    D
    only (iv) is true
  • Consider an n-p-n transitor with its base-emitter junction forward biased and collector base junction reverse biased. Which of the following statements are true?

    A
    Electrons crossover from emitter to collector.
    B
    Holes move from base to collector.
    C
    Electrons move from emitter to base.
    D
    Electrons from emitter move out of base without going to the collector.
  • Similar Questions

    Explore conceptually related problems

    The values of voltage V and current I for a given diode are given in the following table. Find the forward bias resistance and reverse bias resistance for a given diode for a straight line characteristics.

    What is the ratio of forward and reverse resistance of p-n junction diode?

    For the following equilibrium, K_c = 6.3 xx 10^14 at 1000 K. NO_((g)) + O_(3(g)) = NO_(2(g)) + O_(2(g)) Both the forward and reverse reactions in the equilibrium are elementary bimolecular reactions. What is K_c for the reverse reaction ?

    In a p-n junction diode, the current I can be expressed as I= I_(0) "exp" ((eV)/(2k_(B)T)-1) where I_(0) is called the reverse saturation current, V is the voltage across the diode and is positive for forward bias and negative for reverse bias, and I is the current through the diode, k_(B) is the Boltzmann constant (8.6 xx 10^(–5) eV//K) and T is the absolute temperature. If for a given diode I_(0) = 5 xx 10^(-12) A and T = 300 K, then (a) What will be the forward current at a forward voltage of 0.6 V? (b) What will be the increase in the current if the voltage across the diode is increased to 0.7 V? (c) What is the dynamic resistance? (d) What will be the current if reverse bias voltage changes from 1 V to 2 V?

    Which of the following diode is in reverse bias?