Home
Class 12
PHYSICS
A p-n photodiode is fabricated from a se...

A p-n photodiode is fabricated from a semiconductor with band gap of 2.8 eV. Can it detect a wavelength of 6000 nm?

Text Solution

Verified by Experts

The radiation energy of the wavelength of 6000 nm.
`E=(hc)/(lambda)=(6.625xx10^(-34)xx3xx10^(8))/(6000xx10^(-9)xx1.6xx10^(-19))eV`
`=0.00207xx10^(2)eV`
`=0.207eV`
but `E_(g)=2.8eV` is given
`therefore` So, `E gt E_(g)` should be done to test the wavelength of radiation but since there is `E lt E_(g)` the wavelength cannot be tested.
Promotional Banner

Topper's Solved these Questions

  • SEMICONDUCTOR ELECTRONICS : MATERIALS, DEVICES AND SIMPLE CIRCUITS

    KUMAR PRAKASHAN|Exercise Section-B : Numericals (Numerical From .DARPAN. Based On Textbook)|14 Videos
  • SEMICONDUCTOR ELECTRONICS : MATERIALS, DEVICES AND SIMPLE CIRCUITS

    KUMAR PRAKASHAN|Exercise Section-C: NCERT Exemplar Solution (Multiple Choice Qustion (MCQs) )|8 Videos
  • SEMICONDUCTOR ELECTRONICS : MATERIALS, DEVICES AND SIMPLE CIRCUITS

    KUMAR PRAKASHAN|Exercise Section-B : Numericals (Numerical From Textual illustrations)|16 Videos
  • SAMPLE QUESTION PAPER

    KUMAR PRAKASHAN|Exercise PART-B SECTION-C|5 Videos
  • WAVE OPTICS

    KUMAR PRAKASHAN|Exercise SECTION-D (MULTIPLCE CHOICE QUESTIONS (MCQS)) (MCQS FROM DARPAN BASED ON TEXTBOOK)|239 Videos

Similar Questions

Explore conceptually related problems

A p-n photodiode is fabricated from a semiconductor with a band gap of 2.5 eV. It can detect a signal of wavelength ……..

A p-n photodiode is made of a material with a band gap of 2.0 eV. The minimum frequency of the radiation that can be absorbed by the material is nearly ……

Three photodiodes D_(1), D_(2) and D_(3) are made of semiconductors having band gaps of 2.5 eV, 2 eV and 3 eV, respectively. Which ones will be able to detect light of wavelength 6000 Å?

Explain n and p-type semiconductor based on band theory.

The electrical conductivity of a semiconductor of a semiconductor increases when electromagnetic radiation of wavelength shorter than 2480 nm, is incident on it. The band gap in (eV) for the semi conductor is ……

p-side of semiconductor is earthing and -2V potential applied at n-side so in diode …..

An electron hole pari is formed when light of maximum wavelength 6000 Å is incident on the semiconductor. What is the band gap energy of the semiconductor ? (h=6.62xx10^(-34)Js)

A P -type semiconductor has acceptor levels 57 meV above the valence band. The maximum wavelength of light required to create a hole is (Planck's constant h=6.6xx10^(-34)J-s )

Light of wavelength 500 nm is incident on a metal with work functin 2.28 eV.The de-Broglie wavelength of the emitted electron is :[ h=6.6xx10^(-34Js) and c=3xx10^(8)m//s ]

The electron energy in hydrogen atom is given by E_(n) = (-2,18 xx 10^(18)) //m^(2) n^(2)J Calculate the energy required to remove an electron completely from the n=2 orbit .What is the longest wavelength of ligth in cm that can be used to cause this transitiion ?