Draw V-I Characteristics of a p-n junction diode. Answer the following questions, giving reasons-
(i) Why is the current under reverse bias almost independent of the applied potential upto a critical voltage?
(ii) Why does the reverse current show a sudden increase at the critical voltage?
Name any semiconductor device which operates under the reverse bias in the break down region.

Explanation

### Step-by-Step Text Solution

**Step 1: Draw the V-I Characteristics of a p-n Junction Diode**

To draw the V-I characteristics of a p-n junction diode, we need to plot the current (I) on the y-axis and the voltage (V) on the x-axis. The graph will have two main regions: forward bias and reverse bias.

1. **Forward Bias Region**:
- When the diode is forward biased (positive voltage), the current increases exponentially with the increase in voltage. This region is characterized by a steep rise in current after a certain threshold voltage (approximately 0.7V for silicon diodes).
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