A hole diffuses from the p-side to the n-side in a p-n junction.This means that

Options

A. a bond is broken on the n-side and the electron freed from the bond jumps to the conduction band
B. a conduction electron on the p-side jumps to a broken bond to complete it
C. a bond is broken on the p-side and the electron freed from the bond jumps to a broken bond on the p-side to complete it.
D. a bond is broken on the p-side and the electron freed from the bond jumps to a broken bond on the n-side to complete it.

Answer

To solve the question regarding the diffusion of a hole from the p-side to the n-side in a p-n junction, we can break down the process into several steps:

### Step-by-Step Solution:

1. **Understanding the P-N Junction**:
- A p-n junction consists of p-type and n-type semiconductors. In p-type semiconductors, holes (positive charge carriers) are the majority carriers, while in n-type semiconductors, electrons (negative charge carriers) are the majority carriers.

2. **Charge Carriers in P and N Regions**:
- In the p-side, holes are the majority carriers, and electrons are the minority carriers.
- In the n-side, electrons are the majority carriers, and holes are the minority carriers.

3. **Diffusion of Holes**:
- When a hole from the p-side diffuses to the n-side, it seeks to occupy a free space (vacancy) created by an electron leaving its bond. This process is driven by the concentration gradient of holes.

4. **Creation of Free Space**:
- For a hole to diffuse into the n-side, an electron must break its bond in the n-side to create a free space. This free space allows the hole to move into the n-side.

5. **Movement of Electrons**:
- When a hole moves from the p-side to the n-side, it leaves behind a free space in the p-side. An electron from the n-side can then move into this free space, effectively filling the vacancy created by the hole.

6. **Potential Barrier and Depletion Layer**:
- The movement of holes and electrons creates a depletion region where there is a lack of charge carriers, leading to a potential barrier. This barrier prevents further movement of charge carriers without sufficient energy.

7. **Analyzing the Options**:
- **Option A**: A bond is broken on the n-side, and the electron freed from the bond jumps to the conduction band. (Incorrect)
- **Option B**: A conduction electron on the p-side jumps to a broken bond to complete it. (Incorrect)
- **Option C**: A bond is broken on the p-side, and the electron freed from the bond jumps to a broken bond on the p-side to complete it. (Incorrect)
- **Option D**: A bond is broken on the p-side, and the electron freed from the bond jumps to a broken bond on the n-side to complete it. (Correct)

8. **Conclusion**:
- The correct interpretation of the diffusion of holes from the p-side to the n-side is that a bond is broken on the p-side, allowing an electron to fill the vacancy created by the hole, thus facilitating the movement of charge carriers across the junction.