The dc common emitter current gain of a n - p - n transistor is 50 . The potential difference applied across the collector and emitter of a transistor used in CE configuration is `V_(CE)` = 2 V . If the collector resistance `R_C = 4KOmega` , the base current and the collection current `(I_B)` and the collector current `(I_C)` are

Options

A. `I_(B)=10muA,I_(C)=0.5mA`
B. `I_(B)=0.5muA,I_(C)=10mA`
C. `I_(B)=5muA,I_(C)=1mA`
D. `I_(B)=1muA,I_(C)=0.5mA`

Answer

A

Explanation

`I_(C)=(V_(CE))/R_(C)=2/(4xx10^(3))=0.5xx10^(-3)A=0.5mA`
`beta=I_(C)/I_(B)rArrI_(B)=I_(C)/beta=(0.5xx10^(-3))/50=10^(-5)A=10muA`