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In an unblased p-n junction, holes diffu...

In an unblased p-n junction, holes diffuse from the p - region to n- region because

A

(a) free electrons in the n - region attract them

B

(b) they move across the junction by the potential difference

C

(c ) hole concentration in p - region is more as compared to n -region

D

(d) All of the above

Text Solution

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The correct Answer is:
To solve the question regarding why holes diffuse from the p-region to the n-region in an unbiased p-n junction, we can follow these steps: ### Step 1: Understand the Structure of a p-n Junction A p-n junction is formed by joining p-type and n-type semiconductors. In the p-type region, there are more holes (positive charge carriers) than electrons, while in the n-type region, there are more electrons (negative charge carriers) than holes. **Hint:** Remember that p-type semiconductors have an abundance of holes, while n-type semiconductors have an abundance of electrons. ### Step 2: Define Unbiased p-n Junction An unbiased p-n junction means that no external voltage is applied across the junction. This condition allows for the natural diffusion of charge carriers due to concentration gradients. **Hint:** An unbiased p-n junction does not have any external forces acting on it, allowing the natural movement of charge carriers. ### Step 3: Analyze Carrier Concentrations In the p-region, the concentration of holes is higher than that in the n-region. This difference in concentration creates a gradient, prompting holes to diffuse from the p-region to the n-region. **Hint:** Concentration gradients drive the diffusion of charge carriers from areas of high concentration to areas of low concentration. ### Step 4: Identify the Mechanism of Diffusion Holes move from the p-region to the n-region because they are attracted to the electrons present in the n-region. However, the primary reason for their movement is the higher concentration of holes in the p-region compared to the n-region. **Hint:** While attraction to electrons plays a role, the primary driving force for diffusion is the difference in hole concentration. ### Step 5: Conclusion The correct answer to the question is that holes diffuse from the p-region to the n-region because the hole concentration in the p-region is greater than in the n-region. **Final Answer:** Holes diffuse from the p-region to the n-region because the hole concentration in the p-region is more compared to the n-region.

To solve the question regarding why holes diffuse from the p-region to the n-region in an unbiased p-n junction, we can follow these steps: ### Step 1: Understand the Structure of a p-n Junction A p-n junction is formed by joining p-type and n-type semiconductors. In the p-type region, there are more holes (positive charge carriers) than electrons, while in the n-type region, there are more electrons (negative charge carriers) than holes. **Hint:** Remember that p-type semiconductors have an abundance of holes, while n-type semiconductors have an abundance of electrons. ### Step 2: Define Unbiased p-n Junction ...
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Knowledge Check

  • In an unbiased p-n junction electrons diffuse from n-region to p-region because :-

    A
    free electrons in the n-region attract them
    B
    they move across the junction by the potential difference
    C
    hole concentration in p-region is more as compared to n-region
    D
    all of these
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