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The minimum potential difference between...

The minimum potential difference between the base and emitter required to switch a silicon transistor 'ON' is approximately

A

`1 V`

B

`3 V`

C

`5 V`

D

`4.2 V`

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A
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AAKASH INSTITUTE ENGLISH-SEMICONDUCTOR ELECTRONICS (MATERIAL, DEVICES AND SIMPLE CIRUITS )-EXERCISE
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  2. The mobility of free electron is greater than that of free holes becau...

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  3. Carbon , silicon and germanium have four valence electrons each . At r...

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  4. Which circuit will not show current in ammeter ?

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  5. In the energy band diagram of a material shown below, the open circles...

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  6. A p-n photodiode is made of a material with a band gap of 1 e V. The m...

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  7. Consider the junction diode is ideal. The value of current through the...

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  8. A silicon specimen is made into a p-type semiconductor by doping. On a...

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  9. A full wave rectifier circuit along with the input and output are show...

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  10. In a p-n junction diode having depletion layer of thickness 10^(-6)m, ...

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  11. If l(1),l(2),l(3) are the lengths of the emitter, base and collector o...

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  12. a common emitter amplifier gives an output of 3V for an input of 0.01 ...

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  13. In a common base amplifier the phase difference the input signal volta...

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  14. The minimum potential difference between the base and emitter required...

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  15. Which of the following represents NAND gate ?

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  16. The major product of the following reaction is: CH(3)-underset(H)und...

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  17. The output y, when all three inputs are first high and then low, will ...

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  18. To which logic gate does the truth table given in the figure correspon...

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  19. Which of the following is not equal to 1 in Boolean algebra ?

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  20. An n-p-n transistor circuit is arranged as shown in the figure. It is ...

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