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A transsitor is operated in CE configura...

A transsitor is operated in CE configuration at `V_(CC) = 2 V` such that a change in base current from 100 `muA` to 200 `muA` produces a change in the collector current from 9mA to 16.5 mA. The value of current gain, `beta` is -

A

45

B

50

C

60

D

75

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The correct Answer is:
To find the current gain (β) of the transistor in the common emitter (CE) configuration, we can use the formula: \[ \beta = \frac{\Delta I_C}{\Delta I_B} \] where: - \(\Delta I_C\) is the change in collector current, - \(\Delta I_B\) is the change in base current. ### Step 1: Calculate the change in collector current (\(\Delta I_C\)) Given: - Initial collector current, \(I_{C1} = 9 \, \text{mA} = 9 \times 10^{-3} \, \text{A}\) - Final collector current, \(I_{C2} = 16.5 \, \text{mA} = 16.5 \times 10^{-3} \, \text{A}\) Now, we calculate \(\Delta I_C\): \[ \Delta I_C = I_{C2} - I_{C1} = (16.5 \times 10^{-3}) - (9 \times 10^{-3}) = 7.5 \times 10^{-3} \, \text{A} \] ### Step 2: Calculate the change in base current (\(\Delta I_B\)) Given: - Initial base current, \(I_{B1} = 100 \, \mu A = 100 \times 10^{-6} \, \text{A}\) - Final base current, \(I_{B2} = 200 \, \mu A = 200 \times 10^{-6} \, \text{A}\) Now, we calculate \(\Delta I_B\): \[ \Delta I_B = I_{B2} - I_{B1} = (200 \times 10^{-6}) - (100 \times 10^{-6}) = 100 \times 10^{-6} \, \text{A} \] ### Step 3: Substitute the values into the formula for β Now we can substitute \(\Delta I_C\) and \(\Delta I_B\) into the formula for β: \[ \beta = \frac{\Delta I_C}{\Delta I_B} = \frac{7.5 \times 10^{-3}}{100 \times 10^{-6}} \] ### Step 4: Simplify the expression Calculating the above expression: \[ \beta = \frac{7.5 \times 10^{-3}}{100 \times 10^{-6}} = \frac{7.5}{100} \times 10^{3} = 0.075 \times 10^{3} = 75 \] ### Conclusion Thus, the value of the current gain \(\beta\) is: \[ \beta = 75 \] ### Final Answer The value of current gain, \(\beta\) is **75**. ---
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AAKASH INSTITUTE ENGLISH-SEMICONDUCTOR ELECTRONICS (MATERIAL, DEVICES AND SIMPLE CIRUITS )-Assignment section -A (Objective Type Question)
  1. In a common emitter transistor circuit, the base current is 40 muA , t...

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  2. The emitter region in a PNP-junction transistor is more heavily doped ...

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  3. A transsitor is operated in CE configuration at V(CC) = 2 V such that ...

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  4. The input resistance of a silicon transistor is 665Omega. Its base cur...

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  5. The relationship between alpha and beta is given by

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  6. In a common base transistor circuit, the current gain is 0.98. On cha...

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  7. For a transistor amplifier power gain and voltage gain are 7.5 and 2.5...

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  8. The input resistance of a common-emitter amplifier is 2 kOmega and a.c...

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  9. In a silicon transistor, a change of 7.89 mA in the emitter current pr...

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  10. The abjoining logic symbol is equivalent to

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  11. Which of the following gates corresponds to the truth table given belo...

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  12. Figure shows two capacitors of capacitance 2muF and 4muF and a cell of...

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  13. The combination of gates shown in the circuit is equivalent to

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  14. Find Y

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  15. Write down the boolean experssion for output Y of a system shown in fi...

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  16. Copper has face-centered cubic (fcc) lattice with interatomic spacing ...

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  17. If a is the length of the side of a cube, the distance between the bod...

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  18. Liquid crystal display monitors are made of

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  19. Which of the following cannot be obtained from an IC?

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  20. Operational amplifier is a

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