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A potential difference of 2.5 V is appli...

A potential difference of `2.5 V` is applied across the faces of a germanium crystal plate. The face area of the crystal is `1 cm^(2)` and its thickness is `1.0 mm`. The free electron concentration in germanium is `2 xx 10^(19)m^(-3)` and the electron and holes mobilities are `0.33m^(2)/V s `and `0.17 m^(2)/V` s respectively. The current across the plate will be

A

`0.2 A `

B

`0.4 A`

C

`0.6 A`

D

`0.8 A`

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The correct Answer is:
To find the current across the germanium crystal plate, we can follow these steps: ### Step 1: Convert given values to standard units - The potential difference \( V = 2.5 \, \text{V} \). - The face area \( A = 1 \, \text{cm}^2 = 1 \times 10^{-4} \, \text{m}^2 \). - The thickness \( d = 1 \, \text{mm} = 1 \times 10^{-3} \, \text{m} \). - The free electron concentration \( n = 2 \times 10^{19} \, \text{m}^{-3} \). - The electron mobility \( \mu_e = 0.33 \, \text{m}^2/\text{V s} \). - The hole mobility \( \mu_h = 0.17 \, \text{m}^2/\text{V s} \). ### Step 2: Calculate the conductivity \( \sigma \) The conductivity \( \sigma \) can be calculated using the formula: \[ \sigma = n \cdot e \cdot (\mu_e + \mu_h) \] Where \( e \) is the charge of an electron, approximately \( 1.6 \times 10^{-19} \, \text{C} \). Substituting the values: \[ \sigma = (2 \times 10^{19}) \cdot (1.6 \times 10^{-19}) \cdot (0.33 + 0.17) \] Calculating \( \mu_e + \mu_h \): \[ \mu_e + \mu_h = 0.33 + 0.17 = 0.5 \, \text{m}^2/\text{V s} \] Now substituting back: \[ \sigma = (2 \times 10^{19}) \cdot (1.6 \times 10^{-19}) \cdot 0.5 \] \[ \sigma = 2 \cdot 1.6 \cdot 0.5 = 1.6 \, \text{S/m} \] ### Step 3: Calculate the resistance \( R \) The resistance \( R \) can be calculated using the formula: \[ R = \frac{d}{\sigma \cdot A} \] Substituting the values: \[ R = \frac{1 \times 10^{-3}}{1.6 \cdot 1 \times 10^{-4}} \] Calculating: \[ R = \frac{1 \times 10^{-3}}{1.6 \times 10^{-4}} = \frac{10}{1.6} \approx 6.25 \, \Omega \] ### Step 4: Calculate the current \( I \) Using Ohm's law, \( V = I \cdot R \), we can find the current \( I \): \[ I = \frac{V}{R} \] Substituting the values: \[ I = \frac{2.5}{6.25} \] Calculating: \[ I = 0.4 \, \text{A} \] ### Final Answer The current across the plate is \( 0.4 \, \text{A} \). ---
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AAKASH INSTITUTE ENGLISH-SEMICONDUCTOR ELECTRONICS (MATERIAL, DEVICES AND SIMPLE CIRUITS )-Assignment section -B (Objective Type Question)
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  2. What is the power gain in a CE amplifier, where input resistance is 3k...

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  4. Calculate the current l in the following circuit, if all the diodes ar...

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  5. A transistor having alpha = 0.99 is used in a common base amplifier. I...

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  6. A potential difference of 2.5 V is applied across the faces of a germa...

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  7. In the following transistor amplifier circuit beta = 50. Vce to of the...

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  8. Assertio Wavelength of charachteristic X-rays is given by (1)/(lambd...

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  9. The circuit shown in the figure contains two diodes each with a forwar...

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  10. Three amplifiers each having voltage gain 10, are connected in series....

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  11. A semiconductor X is made by doping a germanium crystal with aresenic...

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  12. The maximum effeciency of full wave rectifier is

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  13. Logic gate realised from pn Junctions shown in figure is

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  14. Find the equivalent resistance between P and Q.

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  15. Which of the following pn junction is not used in reverse bias?

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  16. Which of the following break down of pn junction is reverisble?

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  17. In the circuit shown, the average power dissipated in the resistor is ...

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  18. A crystal has bcc structure and its lattice constant is 3.6 A. What is...

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  19. All the diodes are ideal. The current flowing in 2 Omega resistor conn...

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  20. In a transitor (Beta = 50), the voltage across 5 kOmega load resistanc...

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