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A semiconductor X is made by doping a g...

A semiconductor X is made by doping a germanium crystal with aresenic (Z = 33). A second semiconductor Y is made by doping germanium with indium (Z= 49). X and Y are used to form a junction as shown in figure and connected to a battery as shown. Which of following statement is correct?

A

X is p -type, Y is n-type and the junction is forward biased.

B

X is n-type, Y is p - type and the junction is forward biased

C

X is p-type, Y is n - type and the junction is reversed biased

D

X is n-type, Y is p - type and the junction is reverse biased

Text Solution

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The correct Answer is:
D
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AAKASH INSTITUTE ENGLISH-SEMICONDUCTOR ELECTRONICS (MATERIAL, DEVICES AND SIMPLE CIRUITS )-Assignment section -B (Objective Type Question)
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