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A p-n Photodiode is fabricated from a se...

A p-n Photodiode is fabricated from a semiconductor with a band gap of 2.5 eV. The signal wavelength is

A

4000 nm

B

6000 nm

C

4000 A

D

6000 A

Text Solution

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The correct Answer is:
C
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AAKASH INSTITUTE ENGLISH-SEMICONDUCTOR ELECTRONICS (MATERIAL, DEVICES AND SIMPLE CIRUITS )-Assignment section -C (Previous years type question)
  1. The vapour pressure of two pure liquids A and B that forms an ideal so...

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  2. The symbolic representation of four logic gates are given below : ...

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  3. A p-n Photodiode is fabricated from a semiconductor with a band gap of...

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  4. A transistor is operated in common-emitter configuration at V(c) = 2 v...

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  5. Sodium has body centred packing. Distance between two nearest atoms is...

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  6. If the lattice parameter for a crystalline structure is 3.6Å, then the...

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  7. The voltage gain of an amplifier with 9% negative feedback is 10. The ...

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  8. The circuit

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  9. A p-n photodiode is made of a material with a band gap of 2.0 eV. The ...

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  10. In the energy band diagram of a material shown below, the open circles...

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  11. A common emitter amplifier has a voltage gain of 50, an input impedanc...

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  12. In the following circuit, the output Y for all possible inputs A and B...

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  13. For a cubic crystal structure which one of the following relation indi...

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  14. A transistor is operated in common emitter configuration at constant c...

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  15. A forward biased diode is

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  16. The following figure shows a logic gate circuit with two inputs A and ...

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  17. Application of forward bias to p-n junction

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  18. Zener diode is used for:-

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  19. Carbon, silicon and germanium have four valence electrons each. These ...

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  20. Choose the false statement from the following.

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